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NCP1060AD060R2G Datasheet(PDF) 6 Page - ON Semiconductor

Part # NCP1060AD060R2G
Description  High-Voltage Switcher for Low Power Offline SMPS
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP1060AD060R2G Datasheet(HTML) 6 Page - ON Semiconductor

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NCP1060, NCP1063
www.onsemi.com
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Table 3. MAXIMUM RATING TABLE (All voltages related to GND terminal)
Rating
Symbol
Value
Unit
Power supply voltage, VCC pin, continuous voltage
VCC
−0.3 to 20
V
Voltage on all pins, except Drain and VCC pin
Vinmax
−0.3 to 10
V
Drain voltage
BVdss
−0.3 to 700
V
Maximum Current into VCC pin
ICC
10
mA
Drain Current Peak during Transformer Saturation (TJ = 150°C, Note 2):
NCP1060
NCP1063
Drain Current Peak during Transformer Saturation (TJ = 125°C, Note 2):
NCP1060
NCP1063
Drain Current Peak during Transformer Saturation (TJ = 25°C, Note 2):
NCP1060
NCP1063
IDS(PK)
300
850
335
950
520
1500
mA
Thermal Resistance Junction−to−Air – PDIP7 with 200 mm
@ of 35−m copper area
RθJ−A
115
°C/W
Thermal Resistance Junction−to−Air – SOIC10 with 200 mm
@ of 35−m copper area
RθJ−A
132
°C/W
Thermal Resistance Junction−to−Air – SOIC16 with 200 mm
@ of 35−m copper area
RθJ−A
104
°C/W
Maximum Junction Temperature
TJMAX
150
°C
Storage Temperature Range
−60 to +150
°C
Human Body Model ESD Capability (All pins except HV pin) per JEDEC JESD22−A114F
HBM
2
kV
Charged−Device Model ESD Capability per JEDEC JESD22−C101E
CDM
1
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. This device contains latch−up protection and exceeds 100 mA per JEDEC Standard JESD78.
2. Maximum drain current IDS(PK) is obtained when the transformer saturates. It should not be mixed with short pulses that can be seen at turn
on. Figure 3 below provides spike limits the device can tolerate.
Figure 3. Spike Limits


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