N24C08UDTG datasheet(3/10 Pages) ONSEMI

Part #	N24C08UDTG

Description	2-Kb, 4-Kb, 8-Kb and 16-Kb I2C CMOS Serial EEPROM

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Manufacturer	ONSEMI [ON Semiconductor]

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N24C02, N24C04, N24C08, N24C16

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Table 5. PIN IMPEDANCE CHARACTERISTICS

(VCC = 1.7 V / 1.6 V* to 5.5 V, TA = −40°C to +85°C and VCC = 1.8 V to 5.5 V, TA = −40°C to +125°C, unless otherwise speciﬁed.)

Symbol

Parameter

Conditions

Max

Units

CIN (Note 4)

SDA I/O Pin Capacitance

VIN = 0 V

8

pF

CIN (Note 4)

Input Capacitance (other pins)

VIN = 0 V

6

pF

IWP, IA

(Note 5)

WP Input Current, Address Input

Current (A0, A1, A2)

VIN < VIH, VCC = 5.5 V

50

mA

VIN < VIH, VCC = 3.3 V

35

VIN < VIH, VCC = 1.7 V

25

VIN > VIH

2

4. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100

and JEDEC test methods.

5. When not driven, the WP, A0, A1 and A2 pins are pulled down to GND internally. For improved noise immunity, the internal pull−down is relatively

strong; therefore the external driver must be able to supply the pull−down current when attempting to drive the input HIGH. To conserve power,

as the input level exceeds the trip point of the CMOS input buffer (~ 0.5 x VCC), the strong pull−down reverts to a weak current source.

*VCC(min) = 1.6 V for Read operations, TA = −20°C to +85°C.

Table 6. A.C. CHARACTERISTICS

(VCC = 1.7 V / 1.6 V* to 5.5 V, TA = −40°C to +85°C and VCC = 1.8 V to 5.5 V, TA = −40°C to +125°C, unless otherwise speciﬁed.) (Note 6)

Symbol

Parameter

Standard

Fast

Fast−Plus

Units

Min

Max

Min

Max

Min

Max

FSCL

Clock Frequency

100

400

1,000

kHz

tHD:STA

START Condition Hold Time

4

0.6

0.26

ms

tLOW

Low Period of SCL Clock

4.7

1.3

0.50

ms

tHIGH

High Period of SCL Clock

4

0.6

0.26

ms

tSU:STA

START Condition Setup Time

4.7

0.6

0.26

ms

tHD:DAT

Data In Hold Time

0

ms

tSU:DAT

Data In Setup Time

250

100

50

ns

tR (Note 7)

SDA and SCL Rise Time

1,000

300

120

ns

tF (Note 7)

SDA and SCL Fall Time

300

120

ns

tSU:STO

STOP Condition Setup Time

4

0.6

0.26

ms

tBUF

Bus Free Time Between

STOP and START

4.7

1.3

0.5

ms

tAA

SCL Low to Data Out Valid

3.5

0.9

0.45

ms

tDH (Note 7)

Data Out Hold Time

100

50

ns

Ti (Note 7)

Noise Pulse Filtered at SCL

and SDA Inputs

50

ns

tSU:WP

WP Setup Time

0

ms

tHD:WP

WP Hold Time

2.5

1

ms

tWR

Write Cycle Time

4

ms

tPU (Notes 7, 8)

Power-up to Ready Mode

0.35

ms

6. Test conditions according to “A.C. Test Conditions” table.

7. Tested initially and after a design or process change that affects this parameter.

8. tPU is the delay between the time VCC is stable and the device is ready to accept commands.

*VCC(min) = 1.6 V for Read operations, TA = −20°C to +85°C.

Table 7. A.C. TEST CONDITIONS

Input Levels

0.2 x VCC to 0.8 x VCC for VCC ≥ 2.2 V

0.15 x VCC to 0.85 x VCC for VCC < 2.2 V

Input Rise and Fall Times

≤ 50 ns

Input Reference Levels

0.3 x VCC, 0.7 x VCC

Output Reference Levels

0.3 x VCC, 0.7 x VCC

Output Load

Current Source: IOL = 6 mA (VCC ≥ 2.2 V); IOL = 2 mA (VCC < 2.2 V); CL = 100 pF

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