UCC27424P datasheet(3/24 Pages) TI

Part #	UCC27424P

Description	DUAL 4-A HIGH SPEED LOW SIDE MOSFET DRIVERS WITH ENABLE

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Manufacturer	TI [Texas Instruments]

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UCC27423, UCC27424, UCC27425

SLUS545B − NOVEMBER 2002 − REVISED NOVEMBER 2004

3

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absolute maximum ratings over operating free-air temperature (unless otherwise noted)†}

Supply voltage, VDD

−0.3 V to 16 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Output current (OUTA, OUTB) DC, IOUT_DC

0.3 A

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed, (0.5

µs), IOUT_PULSED

4.5 A

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input voltage (INA, INB), VIN

−5 V to 6 V or VDD+0.3 (whichever is larger)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Enable voltage (ENBA, ENBB)

−0.3 V to 6 V or VDD+0.3 (whichever is larger)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power dissipation at TA = 25°C (DGN package)

3 W

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

(D package)

650 mW

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

(P package)

350 mW

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Junction operating temperature, TJ

−55

°C to 150°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature, Tstg

−65

°C to 150°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead temperature (soldering, 10 sec.),

300

°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

‡ All voltages are with respect to GND. Currents are positive into, negative out of the specified terminal.

ELECTRICAL CHARACTERISTICS

VDD = 4.5 V to 15 V, TA = −40°C to 105°C,TA = TJ, (unless otherwise noted)

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNITS

Input (INA, INB)

VIN_H, logic 1 input threshold

2

V

VIN_L, logic 0 input threshold

1

V

Input current

0 V <= VIN <= VDD

−10

0

10

µA

Output (OUTA, OUTB)

Output current

VDD = 14 V,

See Note 1,

See Note 2

4

A

VOH, high-level output voltage

VOH = VDD – VOUT,IOUT = −10 mA

330

450

mV

VOL, low-level output level

IOUT = 10 mA

22

40

mV

Output resistance high

TA = 25°C,

IOUT = −10 mA,

VDD = 14 V,

See Note 3

25

30

35

Ω

TA = full range,

IOUT = −10 mA,

VDD = 14 V,

See Note 3

18

45

Ω

Output resistance low

TA = 25°C,

IOUT = 10 mA,

VDD = 14 V,

See Note 3

1.9

2.2

2.5

Ω

TA = full range

IOUT = 10 mA,

VDD = 14 V,

See Note 3

1.2

4.0

Ω

Latch-up protection

See Note 1

500

mA

NOTES:

1. Ensured by design. Not tested in production.

2. The pullup / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The pulsed output current rating is the

combined current from the bipolar and MOSFET transistors.

3. The pullup / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The output resistance is the RDS(ON) of

the MOSFET transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor.

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