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UCC27424P Datasheet(PDF) 3 Page - Texas Instruments |
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UCC27424P Datasheet(HTML) 3 Page - Texas Instruments |
3 / 24 page UCC27423, UCC27424, UCC27425 SLUS545B − NOVEMBER 2002 − REVISED NOVEMBER 2004 3 www.ti.com absolute maximum ratings over operating free-air temperature (unless otherwise noted)†} Supply voltage, VDD −0.3 V to 16 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output current (OUTA, OUTB) DC, IOUT_DC 0.3 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pulsed, (0.5 µs), IOUT_PULSED 4.5 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input voltage (INA, INB), VIN −5 V to 6 V or VDD+0.3 (whichever is larger) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Enable voltage (ENBA, ENBB) −0.3 V to 6 V or VDD+0.3 (whichever is larger) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power dissipation at TA = 25°C (DGN package) 3 W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (D package) 650 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (P package) 350 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Junction operating temperature, TJ −55 °C to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage temperature, Tstg −65 °C to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature (soldering, 10 sec.), 300 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. ‡ All voltages are with respect to GND. Currents are positive into, negative out of the specified terminal. ELECTRICAL CHARACTERISTICS VDD = 4.5 V to 15 V, TA = −40°C to 105°C,TA = TJ, (unless otherwise noted) PARAMETER TEST CONDITION MIN TYP MAX UNITS Input (INA, INB) VIN_H, logic 1 input threshold 2 V VIN_L, logic 0 input threshold 1 V Input current 0 V <= VIN <= VDD −10 0 10 µA Output (OUTA, OUTB) Output current VDD = 14 V, See Note 1, See Note 2 4 A VOH, high-level output voltage VOH = VDD – VOUT,IOUT = −10 mA 330 450 mV VOL, low-level output level IOUT = 10 mA 22 40 mV Output resistance high TA = 25°C, IOUT = −10 mA, VDD = 14 V, See Note 3 25 30 35 Ω TA = full range, IOUT = −10 mA, VDD = 14 V, See Note 3 18 45 Ω Output resistance low TA = 25°C, IOUT = 10 mA, VDD = 14 V, See Note 3 1.9 2.2 2.5 Ω TA = full range IOUT = 10 mA, VDD = 14 V, See Note 3 1.2 4.0 Ω Latch-up protection See Note 1 500 mA NOTES: 1. Ensured by design. Not tested in production. 2. The pullup / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The pulsed output current rating is the combined current from the bipolar and MOSFET transistors. 3. The pullup / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The output resistance is the RDS(ON) of the MOSFET transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor. |
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