(SEE REVERSE SIDE)

R0

C103Y

C103YY

C103A

C103B

SILICON CONTROLLED RECTIFIER

0.8 AMP, 30 THRU 200 VOLTS

TO-92 CASE

DATA SHEET

DESCRIPTION

The CENTRAL SEMICONDUCTOR C103 Series types are Epoxy Molded Silicon Controlled Rectifiers designed for

control systems and sensing circuit applications.

MAXIMUM RATINGS (TC=25°C unless otherwise noted)

SYMBOL

C103Y

C103YY

C103A

C103B

UNITS

Peak Repetitive Off-State Voltage

VDRM, VRRM

30

60

100

200

V

RMS On-State Current (TC=60°C)

IT(RMS)

0.8

A

Peak One Cycle Surge

ITSM

8.0

A

Peak Forward Gate Current

IGM

0.5

A

Peak Reverse Gate Voltage

VGM

8.0

V

Peak Gate Power Dissipation (tp=8.3ms)

PGM

1.0

W

Average Gate Power Dissipation

PG(AV)

0.01

W

Storage Temperature

Tstg

-65 to +150

°C

Junction Temperature

TJ

-65 to +125

°C

ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IDRM, IRRM

Rated VDRM, VRRM, RGK=1KΩ

1.0

µA

IDRM, IRRM

Rated VDRM, VRRM, TC=125°C, RGK=1KΩ

50

µA

IGT

VD=6.0V, RL=100Ω, RGK=1KΩ

200

µA

IGT

VD=6.0V, RL=100Ω, RGK=1KΩ, TC=-65°C

500

µA

IH

RGK=1KΩ

5.0

mA

IH

RGK=1KΩ, TC=-65°C

10

mA

VGT

VD=6.0V, RL=100Ω

0.8

V

VGT

VD=6.0V, RL=100Ω, TC=-65°C

1.0

V

VGT

VD=6.0V, RL=1KΩ, TC=125°C

0.1

V

VTM

ITM=1.0A

1.5

V

dv/dt

VD=VDRM, TC=125°C, RGK=1KΩ

20

V/

µs