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MC78LC30HT1G Datasheet(PDF) 4 Page - ON Semiconductor

Part # MC78LC30HT1G
Description  Micropower Voltage Regulator
Download  12 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC78LC30HT1G Datasheet(HTML) 4 Page - ON Semiconductor

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MC78LC00 Series
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4
ELECTRICAL CHARACTERISTICS (Vin = Vout(nom.) + 1.0 V, Cin = 1.0 mF, Cout = 1.0 mF, TJ = 25°C, unless otherwise noted.) (Note 11)
HT SUFFIX
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage
30HT1 Suffix (Vin = 5.0 V)
33HT1 Suffix (Vin = 5.0 V)
40HT1 Suffix (Vin = 6.0 V)
50HT1 Suffix (Vin = 7.0 V)
2.950
3.218
3.900
4.875
3.0
3.3
4.0
5.0
3.075
3.382
4.100
5.125
V
Line Regulation
Vin = [VO + 1.0] V to 10 V, IO = 1.0 mA
Regline
0.05
0.2
%/V
Load Regulation (IO = 1.0 to 10 mA)
30HT1 Suffix (Vin = 5.0 V)
33HT1 Suffix (Vin = 6.0 V)
40HT1 Suffix (Vin = 7.0 V)
50HT1 Suffix (Vin = 8.0 V)
Regload
40
40
50
60
60
60
70
90
mV
Output Current (Note 12)
30HT1 Suffix (Vin = 5.0 V)
33HT1 Suffix (Vin = 6.0 V)
40HT1 Suffix (Vin = 7.0 V)
50HT1 Suffix (Vin = 8.0 V)
IO
35
35
45
55
50
50
65
80
mA
Dropout Voltage
30HT1 Suffix (IO = 1.0 mA)
33HT1 Suffix (IO = 1.0 mA)
40HT1 Suffix (IO = 1.0 mA)
50HT1 Suffix (IO = 1.0 mA)
Vin − VO
40
35
25
25
60
53
38
38
mV
Quiescent Current
30HT1 Suffix (Vin = 5.0 V)
33HT1 Suffix (Vin = 5.0 V)
40HT1 Suffix (Vin = 6.0 V)
50HT1 Suffix (Vin = 7.0 V)
ICC
1.1
1.1
1.2
1.3
3.3
3.3
3.6
3.9
mA
Output Voltage Temperature Coefficient
TC
±100
ppm/
°C
7. This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL−STD−883, Method 3015
Machine Model Method 200 V
8. Latch up capability (85
°C) "100 mA
9. Maximum package power dissipation limits must be observed.
PD
+
TJ(max) * TA
R
qJA
10. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
11. Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
12. Output Current is measured when Vout = VO1 − 3% where VO1 = Vout at Iout = 0 mA.
DEFINITIONS
Load Regulation
The change in output voltage for a change in output current
at a constant temperature.
Dropout Voltage
The input/output differential at which the regulator output
no longer maintains regulation against further reductions in
input voltage. Measured when the output drops 3% below its
nominal. The junction temperature, load current, and
minimum input supply requirements affect the dropout level.
Maximum Power Dissipation
The maximum total dissipation for which the regulator will
operate within its specifications.
Quiescent Current
The quiescent current is the current which flows through the
ground when the LDO operates without a load on its output:
internal IC operation, bias, etc. When the LDO becomes
loaded, this term is called the Ground current. It is actually the
difference between the input current (measured through the
LDO input pin) and the output current.
Line Regulation
The change in output voltage for a change in input voltage.
The measurement is made under conditions of low dissipation
or by using pulse technique such that the average chip
temperature is not significantly affected.
Line Transient Response
Typical over and undershoot response when input voltage is
excited with a given slope.
Maximum Package Power Dissipation
The maximum power package dissipation is the power
dissipation level at which the junction temperature reaches its
maximum operating value, i.e. 125
°C. Depending on the
ambient power dissipation and thus the maximum available
output current.


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