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MC78LC30HT1G Datasheet(PDF) 4 Page - ON Semiconductor |
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MC78LC30HT1G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 12 page MC78LC00 Series www.onsemi.com 4 ELECTRICAL CHARACTERISTICS (Vin = Vout(nom.) + 1.0 V, Cin = 1.0 mF, Cout = 1.0 mF, TJ = 25°C, unless otherwise noted.) (Note 11) HT SUFFIX Characteristic Symbol Min Typ Max Unit Output Voltage 30HT1 Suffix (Vin = 5.0 V) 33HT1 Suffix (Vin = 5.0 V) 40HT1 Suffix (Vin = 6.0 V) 50HT1 Suffix (Vin = 7.0 V) 2.950 3.218 3.900 4.875 3.0 3.3 4.0 5.0 3.075 3.382 4.100 5.125 V Line Regulation Vin = [VO + 1.0] V to 10 V, IO = 1.0 mA Regline − 0.05 0.2 %/V Load Regulation (IO = 1.0 to 10 mA) 30HT1 Suffix (Vin = 5.0 V) 33HT1 Suffix (Vin = 6.0 V) 40HT1 Suffix (Vin = 7.0 V) 50HT1 Suffix (Vin = 8.0 V) Regload − − − − 40 40 50 60 60 60 70 90 mV Output Current (Note 12) 30HT1 Suffix (Vin = 5.0 V) 33HT1 Suffix (Vin = 6.0 V) 40HT1 Suffix (Vin = 7.0 V) 50HT1 Suffix (Vin = 8.0 V) IO 35 35 45 55 50 50 65 80 − − − − mA Dropout Voltage 30HT1 Suffix (IO = 1.0 mA) 33HT1 Suffix (IO = 1.0 mA) 40HT1 Suffix (IO = 1.0 mA) 50HT1 Suffix (IO = 1.0 mA) Vin − VO − − − − 40 35 25 25 60 53 38 38 mV Quiescent Current 30HT1 Suffix (Vin = 5.0 V) 33HT1 Suffix (Vin = 5.0 V) 40HT1 Suffix (Vin = 6.0 V) 50HT1 Suffix (Vin = 7.0 V) ICC − − − − 1.1 1.1 1.2 1.3 3.3 3.3 3.6 3.9 mA Output Voltage Temperature Coefficient TC − ±100 − ppm/ °C 7. This device series contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MIL−STD−883, Method 3015 Machine Model Method 200 V 8. Latch up capability (85 °C) "100 mA 9. Maximum package power dissipation limits must be observed. PD + TJ(max) * TA R qJA 10. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 11. Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible. 12. Output Current is measured when Vout = VO1 − 3% where VO1 = Vout at Iout = 0 mA. DEFINITIONS Load Regulation The change in output voltage for a change in output current at a constant temperature. Dropout Voltage The input/output differential at which the regulator output no longer maintains regulation against further reductions in input voltage. Measured when the output drops 3% below its nominal. The junction temperature, load current, and minimum input supply requirements affect the dropout level. Maximum Power Dissipation The maximum total dissipation for which the regulator will operate within its specifications. Quiescent Current The quiescent current is the current which flows through the ground when the LDO operates without a load on its output: internal IC operation, bias, etc. When the LDO becomes loaded, this term is called the Ground current. It is actually the difference between the input current (measured through the LDO input pin) and the output current. Line Regulation The change in output voltage for a change in input voltage. The measurement is made under conditions of low dissipation or by using pulse technique such that the average chip temperature is not significantly affected. Line Transient Response Typical over and undershoot response when input voltage is excited with a given slope. Maximum Package Power Dissipation The maximum power package dissipation is the power dissipation level at which the junction temperature reaches its maximum operating value, i.e. 125 °C. Depending on the ambient power dissipation and thus the maximum available output current. |
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