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NCP583SQ30T1G Datasheet(PDF) 4 Page - ON Semiconductor |
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NCP583SQ30T1G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 10 page NCP583 www.onsemi.com 4 TYPICAL CHARACTERISTICS Figure 8. Dropout Voltage vs. Output Current Figure 9. Dropout Voltage vs. Output Current Figure 10. Dropout Voltage vs. Output Current 25 50 75 100 OUTPUT CURRENT Iout (mA) 150 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 Vout = 1.5 V 125 −40 °C 85 °C 25 °C 25 50 75 100 OUTPUT CURRENT Iout (mA) 150 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 Vout = 1.8 V 125 −40 °C 85 °C 25 °C 25 50 75 100 OUTPUT CURRENT Iout (mA) 150 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 Vout = 2.8 V 125 −40 °C 85 °C 25 °C 0.40 0.35 1.0 0.9 0.8 0.7 0.40 0.35 Figure 11. Ripple Rejection vs. Frequency Figure 12. Ripple Rejection vs. Frequency 1 10 FREQUENCY, f (kHz) 100 70 60 50 40 30 20 10 0 0.1 Iout = 1.0 mA Iout = 30 mA Iout = 50 mA 1 10 FREQUENCY, f (kHz) 100 70 60 50 40 30 20 10 0 0.1 Iout = 1.0 mA Iout = 30 mA Iout = 50 mA Vout = 2.8 V Vin = 3.8 V + 0.5 Vp−p Cout = 1.0 mF Vout = 2.8 V Vin = 3.8 V + 0.5 Vp−p Cout = 0.1 mF |
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