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FQI6N40C Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FQI6N40C Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 9 page  ©2003 Fairchild Semiconductor Corporation Rev. A, August 2003 QFETTM FQB6N40C/FQI6N40C 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. Features • 6A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V • Low gate charge ( typical 16nC) • Low Crss ( typical 15pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQB6N40C/FQI6N40C Units VDSS Drain-Source Voltage 400 V ID Drain Current - Continuous (TC = 25°C) 6A - Continuous (TC = 100°C) 3.6 A IDM Drain Current - Pulsed (Note 1) 24 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 270 mJ IAR Avalanche Current (Note 1) 6A EAR Repetitive Avalanche Energy (Note 1) 7.3 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 73 W - Derate above 25°C 0.58 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 1.71 °C/W RθJA Thermal Resistance, Junction-to-Ambient * -- 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W ! " ! ! ! " " " ! " ! ! ! " " " S D G D2-PAK FQB Series I2-PAK FQI Series GS D GS D |
Similar Part No. - FQI6N40C |
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Similar Description - FQI6N40C |
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