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IRG4PSH71U Datasheet(PDF) 1 Page - International Rectifier |
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IRG4PSH71U Datasheet(HTML) 1 Page - International Rectifier |
1 / 8 page IRG4PSH71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR PD - 91685 E C G n-channel Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations • Industry-benchmark Super-247 package with higher power handling capability compared to same footprint TO-247 • Creepage distance increased to 5.35mm • Generation 4 IGBT's offer highest efficiencies available • Maximum power density, twice the power handling of the TO-247, less space than TO-264 • IGBTs optimized for specific application conditions • Cost and space saving in designs that require multiple, paralleled IGBTs Benefits VCES = 1200V VCE(on) typ. = 2.50V @VGE = 15V, IC = 50A 5/24/04 www.irf.com 1 SUPER - 247 Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 1200 V IC @ TC = 25°C Continuous Collector Current 99 A IC @ TC = 100°C Continuous Collector Current 50 ICM Pulse Collector Current à 200 ILM Clamped Inductive Load current d 200 VGE Gate-to-Emitter Voltage ±20 V EARV Reverse Voltage Avalanche Energy g 150 mJ PD @ TC = 25°C Maximum Power Dissipation 350 W PD @ TC = 100°C Maximum Power Dissipation 140 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Storage Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units RθJC Junction-to-Case- IGBT ––– ––– 0.36 °C/W RθCS Case-to-Sink, flat, greased surface ––– 0.24 ––– RθJA Junction-to-Ambient, typical socket mount ––– ––– 38 Recommended Clip Force 20 (2.0) N (kgf) Wt Weight ––– 6 (0.21) ––– g (oz.) |
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