K4S511632B-TCL75 datasheet(8/15 Pages) SAMSUNG

Part #	K4S511632B-TCL75

Description	512Mb B-die SDRAM Specification

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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CMOS SDRAM

SDRAM 512Mb B-die (x4, x8, x16)

Rev. 1.1 February 2004

DC CHARACTERISTICS (x4)

(Recommended operating condition unless otherwise noted, TA = 0 to 70

°C)

Parameter

Symbol

Test Condition

Version

Unit

Note

75

Operating current

(One bank active)

ICC1

Burst length = 1

tRC

≥ tRC(min)

IO = 0 mA

85

mA

1

Precharge standby current in

power-down mode

ICC2PCKE

≤ VIL(max), tCC = 10ns

2

mA

ICC2PS

CKE & CLK

≤ VIL(max), tCC = ∞

2

Precharge standby current in

non power-down mode

ICC2N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

20

mA

ICC2NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

10

Active standby current in

power-down mode

ICC3PCKE

≤ VIL(max), tCC = 10ns

6

mA

ICC3PS

CKE & CLK

≤ VIL(max), tCC = ∞

6

Active standby current in

non power-down mode

(One bank active)

ICC3N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

30

mA

ICC3NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

25

mA

Operating current

(Burst mode)

ICC4

IO = 0 mA

Page burst

90

mA

1

Refresh current

ICC5

tRC

≥ tRC(min)

200

mA

2

Self refresh current

ICC6

CKE

≤ 0.2V

C6

mA

3

L3

uA

4

1. Measured with outputs open.

2. Refresh period is 64ms.

3. K4S510432B-TC

4. K4S510432B-TL

5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ)

Notes :

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