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K6X8008C2B-F Datasheet(PDF) 1 Page - Samsung semiconductor |
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K6X8008C2B-F Datasheet(HTML) 1 Page - Samsung semiconductor |
1 / 9 page K6X8008C2B Family Revision 1.0 September 2003 1 CMOS SRAM Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. 0.0 0.1 1.0 Remark Preliminary Preliminary Final History Initial draft Revised - Deleted 44-TSOP2-400R package type. - Added Commercial product. Finalized - Changed ICC from 10mA to 6mA - Changed ICC1 from 10mA to 7mA - Changed ICC2 from 50mA to 35mA - Changed ISB from 3mA to 0.4mA - Changed ISB1(Commercial) from 40 µA to 25µA - Changed ISB1(industrial) from 40 µA to 25µA - Changed ISB1(Automotive) from 50 µA to 40µA - Changed IDR(Commercial) from 30 µA to 15µA - Changed IDR(industrial) from 30 µA to 15µA - Changed IDR(Automotive) from 40 µA to 30µA Draft Date October 31, 2002 December 11, 2002 September 16, 2003 The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices. |
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