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K6X8008C2B-TQ55 Datasheet(PDF) 2 Page - Samsung semiconductor |
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K6X8008C2B-TQ55 Datasheet(HTML) 2 Page - Samsung semiconductor |
2 / 9 page K6X8008C2B Family Revision 1.0 September 2003 2 CMOS SRAM 1Mx8 bit Low Power full CMOS Static RAM GENERAL DESCRIPTION The K6X8008C2B families are fabricated by SAMSUNG ′s advanced full CMOS process technology. The families sup- port various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. FEATURES • Process Technology: Full CMOS • Organization: 1M x8 • Power Supply Voltage: 4.5~5.5V • Low Data Retention Voltage: 2.0V(Min) • Three state output and TTL Compatible • Package Type: 44-TSOP2-400F Name Function Name Function CS1, CS2 Chip Select Inputs Vcc Power OE Output Enable Input Vss Ground WE Write Enable Input A0~A19 Address Inputs I/O1~I/O8 Data Inputs/Outputs NC No Connect PRODUCT FAMILY 1. The parameter is measured with 50pF test load. Product Family Operating Temperature Vcc Range Speed Power Dissipation PKG Type Standby (ISB1, Max) Operating (ICC2, Max) K6X8008C2B-B Commercial(0~70 °C) 4.5~5.5V 551)/70ns 25 µA 35mA 44-TSOP2-400F K6X8008C2B-F Industrial(-40~85 °C) 25 µA K6X8008C2B-Q Automotive(-40~125 °C) 40 µA SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. FUNCTIONAL BLOCK DIAGRAM Clk gen. Row select I/O1~I/O8 Data cont Data cont Vcc Vss Precharge circuit. Memory array I/O Circuit Column select PIN DESCRIPTION WE OE CS1 Control Logic CS2 Row Addresses Column Addresses A4 A3 A2 A1 A0 CS1 NC NC I/O1 I/O2 Vcc Vss I/O3 I/O4 NC NC WE A19 A18 A17 A16 A5 A6 A7 OE CS2 A8 NC NC I/O8 I/O7 Vss Vcc I/O6 I/O5 NC NC A9 A10 A11 A12 44-TSOP2 Forward 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 A15 A14 A13 |
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