K6X8008C2B-TQ70 datasheet(8/9 Pages) SAMSUNG

Part #	K6X8008C2B-TQ70

Description	1Mx8 bit Low Power and Low Voltage CMOS Static RAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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8 / 9 page

K6X8008C2B Family

Revision 1.0

September 2003

8

CMOS SRAM

DATA RETENTION WAVE FORM

CS1 controlled

VCC

4.5V

2.2V

VDR

CS1

GND

Data Retention Mode

CS1

≥VCC - 0.2V

tSDR

tRDR

TIMING WAVEFORM OF WRITE CYCLE(3) (CS2 Controlled)

Address

CS1

tAW

NOTES (WRITE CYCLE)

1. A write occurs during the overlap of a low CS1, a high CS2 and a low WE. A write begins at the latest transition among CS1 goes low,

CS2 going high and WE going low : A write end at the earliest transition among CS1 going high, CS2 going low and WE going high,

tWP is measured from the begining of write to the end of write.

2. tCW is measured from the CS1 going low or CS2 going high to the end of write.

3. tAS is measured from the address valid to the beginning of write.

4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS1 or WE going high tWR2 applied

in case a write ends as CS2 going to low.

CS2

tCW(2)

WE

Data in

Data Valid

Data out

High-Z

tCW(2)

tWR(4)

tWP(1)

tDW

tDH

tAS(3)

tWC

CS2 controlled

VCC

4.5V

0.4V

VDR

CS2

GND

Data Retention Mode

tSDR

tRDR

CS2

≤0.2V

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K6X8008C2B-TQ70 Datasheet(PDF) 8 Page - Samsung semiconductor

K6X8008C2B-TQ70 Datasheet(HTML) 8 Page - Samsung semiconductor

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