K6X8008C2B-TQ70 datasheet(1/9 Pages) SAMSUNG

Part #	K6X8008C2B-TQ70

Description	1Mx8 bit Low Power and Low Voltage CMOS Static RAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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K6X8008C2B Family

Revision 1.0

September 2003

1

CMOS SRAM

Document Title

1Mx8 bit Low Power and Low Voltage CMOS Static RAM

Revision History

Revision No.

0.0

0.1

1.0

Remark

Preliminary

Final

History

Initial draft

Revised

- Deleted 44-TSOP2-400R package type.

- Added Commercial product.

Finalized

- Changed ICC from 10mA to 6mA

- Changed ICC1 from 10mA to 7mA

- Changed ICC2 from 50mA to 35mA

- Changed ISB from 3mA to 0.4mA

- Changed ISB1(Commercial) from 40

µA to 25µA

- Changed ISB1(industrial) from 40

µA to 25µA

- Changed ISB1(Automotive) from 50

µA to 40µA

- Changed IDR(Commercial) from 30

µA to 15µA

- Changed IDR(industrial) from 30

µA to 15µA

- Changed IDR(Automotive) from 40

µA to 30µA

Draft Date

October 31, 2002

December 11, 2002

September 16, 2003

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices.

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K6X8008C2B-TQ70 Datasheet(PDF) 1 Page - Samsung semiconductor

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