K7A803609B-QC25 datasheet(9/18 Pages) SAMSUNG

Part #	K7A803609B-QC25

Description	256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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9 / 18 page

K7A801809B

256Kx36 & 512Kx18 Synchronous SRAM

- 9 -

Rev 3.0

Nov. 2003

K7A803609B

DC ELECTRICAL CHARACTERISTICS(VDD=3.3V+0.165V/-0.165V, TA=0°C to +70°C)

Notes : The above parameters are also guaranteed at industrial temperature range.

1. Reference AC Operating Conditions and Characteristics for input and timing.

2. Data states are all zero.

3. In Case of I/O Pins, the Max. VIH=VDDQ+0.3V.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

MAX

UNIT NOTES

Input Leakage Current(except ZZ)

IIL

VDD = Max ; VIN=VSS to VDD

-2

+2

µA

Output Leakage Current

IOL

Output Disabled, VOUT=VSS to VDDQ

-2

+2

µA

Operating Current

ICC

Device Selected, IOUT=0mA,

ZZ

≤VIL , Cycle Time ≥ tCYC Min

-25

-

470

mA

1,2

Standby Current

ISB

Device deselected, IOUT=0mA,

ZZ

≤VIL, f=Max,

All Inputs

≤0.2V or ≥ VDD-0.2V

-25

-

170

mA

ISB1

Device deselected, IOUT=0mA, ZZ

≤0.2V,

f = 0, All Inputs=fixed (VDD-0.2V or 0.2V)

-

100

mA

ISB2

Device deselected, IOUT=0mA, ZZ

≥VDD-0.2V,

f=Max, All Inputs

≤VIL or ≥VIH

-60

mA

Output Low Voltage(3.3V I/O)

VOL

IOL=8.0mA

-

0.4

V

Output High Voltage(3.3V I/O)

VOH

IOH=-4.0mA

2.4

-

V

Output Low Voltage(2.5V I/O)

VOL

IOL=1.0mA

-

0.4

V

Output High Voltage(2.5V I/O)

VOH

IOH=-1.0mA

2.0

-

V

Input Low Voltage(3.3V I/O)

VIL

-0.3*

0.8

V

Input High Voltage(3.3V I/O)

VIH

2.0

VDD+0.3

V

3

Input Low Voltage(2.5V I/O)

VIL

-0.3*

0.7

V

Input High Voltage(2.5V I/O)

VIH

1.7

VDD+0.3

V

3

VSS

VIH

VSS-1.0V

20% tCYC(MIN)

(VDD=3.3V+0.165V/-0.165V,VDDQ=3.3V+0.165/-0.165V or VDD=3.3V+0.165V/-0.165V,VDDQ=2.5V+0.4V/-0.125V, TA=0to70

°C)

TEST CONDITIONS

* The above parameters are also guaranteed at industrial temperature range.

Parameter

Value

Input Pulse Level(for 3.3V I/O)

0 to 3.0V

Input Pulse Level(for 2.5V I/O)

0 to 2.5V

Input Rise and Fall Time(Measured at 20% to 80% for 3.3V I/O)

1.0V/ns

Input Rise and Fall Time(Measured at 20% to 80% for 2.5V I/O)

1.0V/ns

Input and Output Timing Reference Levels for 3.3V I/O

1.5V

Input and Output Timing Reference Levels for 2.5V I/O

VDDQ/2

Output Load

See Fig. 1

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