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NCP663 Datasheet(PDF) 2 Page - ON Semiconductor |
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NCP663 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 9 page NCP662, NCV662, NCP663, NCV663 http://onsemi.com 2 Figure 1. NCP662/NCV662 Typical Application Diagram This device contains 28 active transistors Output C2 + Input GND Enable Vin Vout + C1 OFF ON Figure 2. NCP663/NCV663 Typical Application Diagram This device contains 28 active transistors Output C2 + Input GND N/C Vin Vout + C1 PIN FUNCTION DESCRIPTION NCP662/ NCV662 NCP663/ NCV663 Pin Name Description 1 1 GND Power supply ground. 2 2 Vin Positive power supply input voltage. 3 3 Vout Regulated output voltage. 4 − Enable This input is used to place the device into low−power standby. When this input is pulled low, the device is disabled. If this function is not used, Enable should be connected to Vin. − 4 N/C No internal connection. MAXIMUM RATINGS Rating Symbol Value Unit Input Voltage Vin 6.0 V Enable Voltage (NCP662/NCV662 ONLY) Enable −0.3 to Vin +0.3 V Output Voltage Vout −0.3 to Vin +0.3 V Power Dissipation and Thermal Characteristics Power Dissipation Thermal Resistance, Junction to Ambient PD RqJA Internally Limited 330 W C/W Operating Junction Temperature TJ +150 C Operating Ambient Temperature NCP662/NCP663 NCV662/NCV663 TA −40 to +85 −40 to +125 C Storage Temperature Tstg −55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. This device series contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MIL−STD−883, Method 3015 Machine Model Method 200 V 2. Latch up capability (85C) "100 mA DC with trigger voltage. |
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