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NCP1608 Datasheet(PDF) 5 Page - ON Semiconductor |
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NCP1608 Datasheet(HTML) 5 Page - ON Semiconductor |
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5 / 24 page  NCP1608 www.onsemi.com 5 Table 3. ELECTRICAL CHARACTERISTICS (Continued) VFB = 2.4 V, VControl = 4 V, Ct = 1 nF, VCS = 0 V, VZCD = 0 V, CDRV = 1 nF, VCC = 12 V, unless otherwise specified (For typical values, TJ = 25°C. For min/max values, TJ = −55°C to 125°C (Note 6), VCC = 12 V, unless otherwise specified) Characteristic Unit Max Typ Min Symbol Test Conditions ERROR AMPLIFIER Minimum Control Voltage to Generate Drive Pulses VControl = Decreasing until VDRV is low, VCt = 0 V TJ = −40°C to +125°C TJ = −55°C to +125°C (Note 6) Ct(offset) 0.37 0.37 0.65 0.65 0.88 1.1 V Control Voltage Range VEAH – Ct(offset) VEA(DIFF) 4.5 4.9 5.3 V RAMP CONTROL Ct Peak Voltage VControl = open VCt(MAX) 4.775 4.93 5.025 V On Time Capacitor Charge Current VControl = open VCt = 0 V to VCt(MAX) Icharge 235 275 297 mA Ct Capacitor Discharge Duration VControl = open VCt = VCt(MAX) −100 mV to 500 mV tCt(discharge) − 50 150 ns PWM Propagation Delay dV/dt = 30 V/ ms VCt = VControl − Ct(offset) to VDRV = 10% tPWM − 130 220 ns CURRENT SENSE Current Sense Voltage Threshold VILIM 0.45 0.5 0.55 V Leading Edge Blanking Duration VCS = 2 V, VDRV = 90% to 10% tLEB 100 190 350 ns Overcurrent Detection Propagation De- lay dV/dt = 10 V/ ms VCS = VILIM to VDRV = 10% tCS 40 100 170 ns Current Sense Bias Current VCS = 2 V ICS −1 − 1 mA ZERO CURRENT DETECTION ZCD Arming Threshold VZCD = Increasing VZCD(ARM) 1.25 1.4 1.55 V ZCD Triggering Threshold VZCD = Decreasing VZCD(TRIG) 0.6 0.7 0.83 V ZCD Hysteresis VZCD(HYS) 500 700 900 mV ZCD Bias Current VZCD = 5 V IZCD −2 − +2 mA Positive Clamp Voltage IZCD = 3 mA TJ = −40°C to +125°C TJ = −55°C to +125°C (Note 6) VCL(POS) 9.8 9.2 10 10 12 12 V Negative Clamp Voltage IZCD = −2 mA TJ = −40°C to +125°C TJ = −55°C to +125°C (Note 6) VCL(NEG) −0.9 −1.1 −0.7 −0.7 −0.5 −0.5 V ZCD Propagation Delay VZCD = 2 V to 0 V ramp, dV/dt = 20 V/ ms VZCD = VZCD(TRIG) to VDRV = 90% tZCD − 100 170 ns Minimum ZCD Pulse Width tSYNC − 70 − ns Maximum Off Time in Absence of ZCD Transition Falling VDRV = 10% to Rising VDRV = 90% tstart 75 165 300 ms DRIVE Drive Resistance Isource = 100 mA Isink = 100 mA ROH ROL − − 12 6 20 13 W Rise Time 10% to 90% trise − 35 80 ns Fall Time 90% to 10% tfall − 25 70 ns Drive Low Voltage VCC = VCC(on)−200 mV, Isink = 10 mA Vout(start) − − 0.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. For coldest temperature, QA sampling at −40 °C in production and −55°C specification is Guaranteed by Characterization. |
Similar Part No. - NCP1608_15 |
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Similar Description - NCP1608_15 |
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