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LT1910ES8 Datasheet(PDF) 10 Page - Linear Technology |
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LT1910ES8 Datasheet(HTML) 10 Page - Linear Technology |
10 / 12 page 10 LT1910 sn1910 1910fs Low Voltage/Wide Supply Range Operation When the supply is less than 12V, the LT1910’s charge pump does not produce sufficient gate voltage to fully enhance the standard N-channel MOSFET. For these appli- cations, a logic-level MOSFET can be used to extend the operating supply down to 8V. If the MOSFET has a maxi- mum VGS rating of 15V or greater, then the LT1910 can also operate up to a supply voltage of 60V (absolute maximum rating of the V+ pin). Protecting Against Supply Transients The LT1910 is 100% tested and guaranteed to be safe from damage with 60V applied between the V+ and GND pins. However, when this voltage is exceeded, even for a few microseconds, the result can be catastrophic. For this reason it is imperative that the LT1910 is not exposed to supply transients above 60V. A transient suppressor, such as Diodes Inc.’s SMAJ48A, should be added between the V+ and GND pins for such applications. For proper current sense operation, the V+ pin is required to be connected to the positive side of the drain sense resistor (see Drain Sense Configuration). Therefore, the supply should be adequately decoupled at the node where the V+ pin and drain sense resistor meet. Several hundred microfarads may be required when operating with a high current switch. When the operating voltage approaches the 60V absolute maximum rating of the LT1910, local supply decoupling APPLICATIO S I FOR ATIO between the V+ and GND pins is highly recommended. An RC snubber with a transient suppressor are an absolute necessity. Note however that resistance should not be added in series with the V+ pin because it will cause an error in the current sense threshold. Low Side Driving Although the LT1910 is primarily targeted at high side (grounded load) switch applications, it can also be used for low side (supply connected load) switch applications. Figures 8a and 8b illustrate the LT1910 driving low side power MOSFETs. Because the LT1910 charge pump tries to pump the gate of the N-channel MOSFET above the supply, a clamp zener is required to prevent the VGS (absolute maximum) of the MOSFET from being exceeded. Figure 8a. Low Side Driver with Load Current Sensing Figure 8b. Low Side Driver for Source Current Sensing FAULT IN TIMER V+ SENSE GATE 3 4 2 8 6 5 LT1910 R1 5.1k 5V FAULT OUTPUT INPUT GND Q1 IRF630 15V 1N4744 1910 F08b C1 10 µF 50V CT 1 µF 1 RS 0.02 Ω HV LOAD 51 Ω 2N2222 8V TO 24V HV – + + LT1006 51 Ω FAULT IN V+ SENSE 3 4 8 6 LT1910 R1 5.1k 12V TO 48V 5V FAULT OUTPUT INPUT 0V GND Q1 IRFZ44 15V 1N4744 1910 F08a C1 100 µF 100V CT 1 µF RS 0.01 Ω (PTC) 4A LOAD + GATE TIMER 5 1 2 |
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