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Plastic-Encapsulate Mosfets

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

Advanced Trench Process Technology

High Density Cell Design for Ultra Low On-Resistance

Fully Characterized Avalanche Voltage and Current

Improved Shoot-Through FOM

Parameter

Symbol

Ratings

Units

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

8

V

Drain Current (Continuous)

ID

2.4

A

Drain Current (Pulsed)

1

IDM

8

A

Total Power Dissipation @TA=25oC

PD

0.9

W

Maximum Diode Forward Current

IS

1.6

A

Operating Junction and Storage Temperature Range

-55 to +150

°C

Thermal Resistance Junction to Ambient (PCB mounted)

2

140

°C/W

1: Repetitive Rating: Pulse width limited by the maximum junction temperation. 2: 1-in2 2oz Cu PCB board

Electrical Characteristics (TA=25°C, unless otherwise noted)

Symbol

Characteristic

Test Conditions

Min.

Typ.

Max.

Unit

• Off Characteristics

Drain-Source Breakdown Voltage

20

-

-

V

Zero Gate Voltage Drain Current

-

-

1

uA

Gate-Body Leakage Current

-

-

±100

nA

•On Characteristics

3

Gate Threshold Voltage

0.6

0.8

1.2

V

Drain-Source On-State Resistance

-

40

60

mΩ

-

50

115

Forward Transconductance

-

10

-

S

•

Dynamic Characteristics

4

Input Capacitance

-

426

-

PF

Output Capacitance

-

79.5

-

Reverse Transfer Capacitance

-

56

-

N-Channel MOSFET

SOT-23

1.Gate

2.Source

3.Drain

G

D

S

SI2300

Absolute Maximum Ratings (TA=25

PF

PF