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MMDT5401 Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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MMDT5401 Datasheet(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
1 / 2 page Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5551) Ideal for Medium Power Amplification and Switching MARKING: K4M MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage V CBO -160 V Collector-Emitter Voltage V CEO -150 V Emitter-Base Voltage V EBO -5 V Collector Current -Continuous I C -200 Collector Power Dissipation I C 200 Junction Temperature T J 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC=-100μA , IE=0 -160 V Collector-emitter breakdown voltage VCEO IC= -1mA , IB=0 -150 V Emitter-base breakdown voltage VEBO IE=-10μA, IC=0 -5 V Collector cut-off current ICBO VCB=-120 V , IE=0 -0.05 μA Emitter cut-off current IEBO VEB=-3V , IC=0 -0.05 μA DC current gain hFE(1) VCE=-5 V, IC= -1mA 50 hFE(2) VCE=-5 V, IC= -10mA 100 300 hFE(3) VCE=-5 V, IC= -50mA 50 Collector-emitter saturation voltage VCE(sat)1 IC=-10 mA, IB=-1mA -0.2 V VCE(sat)2 IC=-50 mA, IB=-5mA -0.5 V Base-emitter saturation voltage VBE(sat)1 IC= -10 mA, IB=-1mA -1 V VBE(sat)2 IC= -50 mA, IB=-5mA -1 V Transition frequency f T VCE= -10V, IC= -10mA,f = 100MHz 100 MHz Output Capacitance Cob VCB=-10V, IE= 0,f=1MHz 6 pF Noise Figure NF VCE= -5.0V, IC= -200μA, RS= 10Ω,f = 1.0kHz 8.0 dB MMDT5401(PNP) E 2 B 2 C 1 C 2 B 1 E 1 SOT-363 mW mA |
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