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PCF8831 Datasheet(PDF) 11 Page - NXP Semiconductors |
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PCF8831 Datasheet(HTML) 11 Page - NXP Semiconductors |
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11 / 28 page  2002 Aug 14 11 Philips Semiconductors Preliminary specification STN RGB - 160 output row driver PCF8831 10 DC CHARACTERISTICS (VDD − VSS) = 2.4 to 3.5 V; (VH − VL) = 15 to 55 V; Tamb = −40 to +85 °C; unless otherwise specified. Notes 1. The minimum level of (VMH − VM) depends on (VM − VL); a lower level of (VM − VL) requires lower offset of VMH referred to VM. A higher level of (VMH − VM) improves dynamic behaviour. A minimum level of (VMH − VM)=2.5V+0.2 × (VM − VL) should be maintained. 2. Row outputs tested one at a time. 3. (VH − VL) = 37 V; VMH =VH; (VDD − VSS) = 2.8 V; ; (VM − VSS) = 1.47 V. 4. fRCLK = 19.2 kHz; SVM = 0; ROWRES1 = ROWRES2 = HIGH; single line mode; all row outputs open-circuit. 5. Frame inversion frequency . SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VL LOW-level LCD driving voltage − 0 − V VH HIGH-level LCD driving voltage VL + 15.0 − VL + 45.0 V VM MID-level LCD driving voltage VSS VDD V VMH auxiliary supply voltage for row switching note 1 VM +10 VL +40 V VSS logic supply negative voltage VM − 2.0 − VM − 1.25 V VDD logic supply positive voltage VSS + 2.4 − VSS + 3.5 V VIH HIGH-level input voltage all inputs; referred to VSS VSS + 0.8 × (VDD − VSS) − VDD V VIL LOW-level input voltage all inputs; referred to VSS VSS − VSS + 0.2 × (VDD − VSS) V ILI input leakage current all inputs VI =VDD −− 5 µA VI =VSS −5 −−µA RO row output on-state resistance notes 2 and 3 IO = +100 µA − 600 tbf Ω IO = ±100 µA − 600 tbf Ω IO = −100 µA − 600 tbf Ω IDD current at pad VDD notes 3, 4 and 5 − 30 tbf µA IVH current at pad VH − 10 tbf µA IVMH current at pad VMH − 3 tbf µA IVM current at pad VM − 2 tbf µA IVL current at pad VL − 13 tbf µA V L V H + 2 -------------------- V M V H V L + 2 -------------------- = f FI f RCLK 2 160 × ------------------- = |
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Similar Description - PCF8831 |
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