STP16NK60Z datasheet(3/11 Pages) STMICROELECTRONICS

Part #	STP16NK60Z

Description	N-CHANNEL 600V - 0.38??- 14A TO-220 / I2SPAK / TO-247 Zener-Protected SuperMESH??MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STP16NK60Z - STB16NK60Z-S - STW16NK60Z

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF

DYNAMIC

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%

VDSS.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID =1mA,VGS = 0

600

V

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS =Max Rating

VDS =Max Rating,TC = 125 °C

1

50

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS = ± 20V

±10

µA

VGS(th)

Gate Threshold Voltage

VDS =VGS,ID = 100 µA

3

3.75

4.5

V

RDS(on)

Static Drain-source On

Resistance

VGS =10V, ID = 7 A

0.38

0.42

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS =15V, ID =7 A

12

S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V,f= 1MHz,VGS = 0

2650

285

62

pF

Coss eq. (3)

Equivalent Output

Capacitance

VGS =0V, VDS = 0V to 480V

158

pF

td(on)

tr

td(off)

tf

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VDD =480 V, ID =14 A

RG =4.7Ω VGS =10 V

(Resistive Load see, Figure 3)

30

25

70

15

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD =480V, ID =14 A,

VGS =10V

86

17

46

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (2)

Source-drain Current

Source-drain Current (pulsed)

14

56

A

VSD (1)

ForwardOnVoltage

ISD =14A,VGS =0

1.6

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD =14A,di/dt =100 A/µs

VDD =100 V, Tj =25°C

(see test circuit, Figure 5)

490

5.4

22

ns

µC

A

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD =14A,di/dt =100 A/µs

VDD =100 V, Tj =150°C

(see test circuit, Figure 5)

585

7

24

ns

µC

A

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