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CJ3134K-SOT23 Datasheet(PDF) 1 Page - ZP Semiconductor |
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CJ3134K-SOT23 Datasheet(HTML) 1 Page - ZP Semiconductor |
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1 / 3 page  SOT-23 Plastic-Encapsulate MOSFETS CJ3134K N-Channel MOSFET FEATURES Lead Free Product is Acquired Surface Mount Package N-Channel Switch with Low RDS(on) Operated at Low Logic Level Gate Drive APPLICATIONS Load/Power Switching Interfacing Switching Battery Management for Ultra Small Portable Electronics Logic Level Shift MARKING: 34K Maximum ratings (Ta=25 ℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current (note 1) ID 0.75 A Pulsed Drain Current (tp=10μs) IDM 1.8 A Power Dissipation (note 1) PD 350 mW Thermal Resistance from Junction to Ambient (note 1) RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8” duration for 10 s) TL 260 ℃ SOT-23 1. GATE 2. SOURCE 3. DRAIN 1 of 3 sales@zpsemi.com www.zpsemi.com CJ3134K |
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