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NCL30082B1DR2G Datasheet(PDF) 5 Page - ON Semiconductor |
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NCL30082B1DR2G Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 35 page NCL30082 www.onsemi.com 5 Table 3. ELECTRICAL CHARACTERISTICS (Unless otherwise noted: For typical values TJ = 25°C, VCC = 12 V; For min/max values TJ = −40°C to +125°C, Max TJ = 150°C, VCC = 12 V) Description Unit Max Typ Min Symbol Test Condition CURRENT SENSE Maximum Internal current limit VILIM 0.95 1 1.05 V Leading Edge Blanking Duration for VILIM (Tj = −25°C to 125°C) (Not applicable for NCL30082D) tLEB 250 300 350 ns Leading Edge Blanking Duration for VILIM (Tj = −40°C to 125°C) tLEB 240 300 350 ns Input Bias Current DRV high Ibias – 0.02 – mA Propagation delay from current detection to gate off−state tILIM – 50 150 ns Threshold for immediate fault protection activation VCS(stop) 1.35 1.5 1.65 V Leading Edge Blanking Duration for VCS(stop) tBCS – 120 – ns Blanking time for CS to GND short detection VpinVIN = 1 V tCS(blank1) 6 – 12 ms Blanking time for CS to GND short detection VpinVIN = 1 V NCL30082D tCS(blank1)D 8 10.7 14 ms Blanking time for CS to GND short detection VpinVIN = 3.3 V tCS(blank2) 2 – 4 ms Blanking time for CS to GND short detection VpinVIN = 3.3 V NCL30082D tCS(blank2)D 2.6 3.6 4.6 ms GATE DRIVE Drive Resistance DRV Sink DRV Source RSNK RSRC – – 13 30 – – W Drive current capability DRV Sink (Note 6) DRV Source (Note 6) ISNK ISRC – – 500 300 – – mA Rise Time (10% to 90%) CDRV = 470 pF tr – 40 – ns Fall Time (90% to 10%) CDRV = 470 pF tf – 30 – ns DRV Low Voltage VCC = VCC(off)+0.2 V CDRV = 470 pF, RDRV = 33 kW VDRV(low) 8 – – V DRV High Voltage VCC = 30 V CDRV = 470 pF, RDRV = 33 kW VDRV(high) 10 12 14 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Guaranteed by design. |
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