Power Transistors

1

Publication date: March 2004

SJD00307AED

2SC5909

Silicon NPN triple diffusion mesa type

For horizontal deflection output

■ Features

• High breakdown voltage: V

• High-speed switching: t

• Wide safe operation area

■ Absolute Maximum Ratings T

C

= 25°C

■ Electrical Characteristics T

C

= 25°C ± 3°C

Unit: mm

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base cutoff current (Emitter open)

µA

= 1 500 V, I

E

= 01

mA

Emitter-base cutoff current (Collector open)

µA

Forward current transfer ratio

5

10



Collector-emitter saturation voltage

= 7.5 A, I

B

= 1.88 A

2.5

V

Base-emitter saturation voltage

1.5

V

Transition frequency

3

MHz

Storage time

= 7.5 A, Resistance loaded

2.7

µs

Fall time

0.2

µs

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

1 500

V

Collector-emitter voltage (E-B short)

1 500

V

Collector-emitter voltage (Base open)

600

V

Emitter-base voltage (Collector open)

7V

Base current

5A

Collector current

15

A

25

A

Collector power dissipation

50

W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

(4.0)

5˚

5˚

5˚

5˚

5˚

1

5˚

23

1: Base

2: Collector

3: Emitter

EIAJ: SC-94

TOP-3E-A1 Package

Note) *: Non-repetitive peak collector current

Internal Connection

B

C

E