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NSV45015WT1G Datasheet(PDF) 3 Page - ON Semiconductor |
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NSV45015WT1G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 8 page NSI45015WT1G http://onsemi.com 3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation (Note 5) TA = 25°C Derate above 25 °C PD 208 1.66 mW mW/ °C Thermal Resistance, Junction−to−Ambient (Note 5) RθJA 600 °C/W Thermal Reference, Lead−to−Ambient (Note 5) R ψLA 404 °C/W Thermal Reference, Junction−to−Cathode Lead (Note 5) R ψJL 196 °C/W Total Device Dissipation (Note 6) TA = 25°C Derate above 25 °C PD 227 1.8 mW mW/ °C Thermal Resistance, Junction−to−Ambient (Note 6) RθJA 550 °C/W Thermal Reference, Lead−to−Ambient (Note 6) R ψLA 390 °C/W Thermal Reference, Junction−to−Cathode Lead (Note 6) R ψJL 160 °C/W Total Device Dissipation (Note 7) TA = 25°C Derate above 25 °C PD 347 2.8 mW mW/ °C Thermal Resistance, Junction−to−Ambient (Note 7) RθJA 360 °C/W Thermal Reference, Lead−to−Ambient (Note 7) R ψLA 200 °C/W Thermal Reference, Junction−to−Cathode Lead (Note 7) R ψJL 160 °C/W Total Device Dissipation (Note 8) TA = 25°C Derate above 25 °C PD 368 2.9 mW mW/ °C Thermal Resistance, Junction−to−Ambient (Note 8) RθJA 340 °C/W Thermal Reference, Lead−to−Ambient (Note 8) R ψLA 208 °C/W Thermal Reference, Junction−to−Cathode Lead (Note 8) R ψJL 132 °C/W Total Device Dissipation (Note 9) TA = 25°C Derate above 25 °C PD 436 3.5 mW mW/ °C Thermal Resistance, Junction−to−Ambient (Note 9) RθJA 287 °C/W Thermal Reference, Lead−to−Ambient (Note 9) R ψLA 139 °C/W Thermal Reference, Junction−to−Cathode Lead (Note 9) R ψJL 148 °C/W Total Device Dissipation (Note 10) TA = 25°C Derate above 25 °C PD 463 3.7 mW mW/ °C Thermal Resistance, Junction−to−Ambient (Note 10) RθJA 270 °C/W Thermal Reference, Lead−to−Ambient (Note 10) R ψLA 150 °C/W Thermal Reference, Junction−to−Cathode Lead (Note 10) R ψJL 120 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 5. FR−4 @ 100 mm2, 1 oz. copper traces, still air. 6. FR−4 @ 100 mm2, 2 oz. copper traces, still air. 7. FR−4 @ 300 mm2, 1 oz. copper traces, still air. 8. FR−4 @ 300 mm2, 2 oz. copper traces, still air. 9. FR−4 @ 500 mm2, 1 oz. copper traces, still air. 10. FR−4 @ 500 mm2, 2 oz. copper traces, still air. NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9. Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical measurements and method of attachment. |
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