Infineon’s New LTE Low Noise Amplifiers

Almost Double Smartphone Data Rates

Improving the user experience by improving smartphone data rates by up to 96% is

the boast of Infineon for its LTE LNA (low noise amplifiers) and quad LNA banks.

The BGA7x1N6 and BGM7xxxx4L12 families provide a low noise figure, the exact gain

and high linearity needed to help smartphone designers overcome the challenges

of LTE or 4G which allows for data rates up to 300Mbit/s – compared to 56Mbit/s in

the latest UMTS (3G) release. However, the increasing complexity of the RF front end

results in more RF components (e.g. switches, diplexers and dividers) and leads to

increasing losses over the whole system and deterioration of the signal-to-noise ratio

(SNR). The distance between antenna and the RF transceiver leads to additional line

losses that also negatively affect SNR and therefore the data rate.

The LNAs and LNA banks are based on the company’s Silicon Germanium Carbon

(SiGe:C) chip technology and include built-in ESD protection of 2kV HBM.

They are located in the diversity and main antenna path of the phone and push smart-

phone data rates’ limits 96% higher than in solutions without LNAs. High linearity

assures optimal signal reception even in conditions of poorly isolated antenna and

long line losses between antenna and transceiver. The typical sensitivity improvement

of 3.4dB compared to systems without LNAs is achieved in devices with a package size

The products are also self-shielded to prevent parasitic interference and require only

one external component per LNA.

There are three LTE LNAs and seven quad LNA bank families to address the required

band configurations for different world regions, each letter in the series denotes a

different frequency band: L for the low, 0.7GHz to 1GHz band; M for mid, 1.7GHz to

2.2GHz band; and H for high, 2.3GHz to 2.7GHz band.

They are shipped in RoHS-compliant TSNP-6-2 or TSLP 12-4 plastic packages.

Product Brief

www.infineon.com/rfmmic

„

High linearity

„

Best-in-class noise figure

„

Low current consumption

„

Supply voltage: 1.5V to 3.3V

„

Ultra small

– Single LNAs:

TSNP-6-2 leadless package

– Quad LNA banks:

TSLP-12-4 leadless package

„

B7HF Silicon Germanium Carbon

(SiGe:C) technology

„

RF output internally matched

to 50Ω

„

Low external component count

„

2kV HBM ESD protection

„

Pb-free (RoHS compliant) package

„

Smartphones

„

Tablets

„

Datacards

„

M2M communication

Key Features

Applications