NCP367

www.onsemi.com

10

to this option, both fast charge or USB charge are

authorized with the same device.

1.5 A version

0

500

1000

1500

0

100

200

300

400

500

600

700

800

Rilim(k

W)

GS = High

GS = Low

0

1

2

3

0

100

200

300

400

500

600

700

800

GS = Low

GS = High

Figure 13. Over Current Threshold versus

Rilim (k

W)

NCP367DxMUxxTBG

NCP367OxMUxxTBG

During overcurrent event, charge area is opened and

FLAG output is tied to low, allowing the

mController to take

into account the fault event and then open the charge path.

At power up (accessory is plugged on input pins), the

threshold is exceeded over 1.8 ms, the device enter in OCP

burst mode until the overcurrent event disappears.

connection of the Li ion battery pack allows preventing

overvoltage transient, greater than 4.35 V. In case of wrong

charger conditions, the PMOS is then opened, eliminating

Battery pack over voltage which could create safety issues

and temperature increasing.

The 4.35 V comparator has a 150 mV built−in hysteresis.

More of that, deglitch function of 2 ms is integrated to

prevent voltage transients on the Battery voltage. If the

battery over voltage condition exceeds deglitch time, the

charge path is opened and FLAG pin is tied to low level

At wall adapter insertion, and if the battery is fully

to be recharged (4.2 V typ − 4.1 V min).

A serial resistor has to be placed in series with Vbat pin

and battery connection, with a 200 k

W recommended

value.

PCB Recommendations

nevertheless PCB layout rules must be respected to

properly evacuate the heat out of the silicon. The DFN

PAD1 corresponds to the PMOS drain so must be connected

to OUT plane to increase the heat transfer. Of course, in any

case, this pad shall be not connected to any other potential.

Following figure shows package thermal resistance of a

DFN 2.2x2 mm.