SQJ202EP

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Vishay Siliconix

S15-2474-Rev. A, 19-Oct-15

2

Document Number: 62926

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Notes

a. Pulse test; pulse width

≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

N-Ch 1

12

-

-

V

N-Ch 2

12

-

-

Gate-Source Threshold Voltage

N-Ch 1

1

1.5

2

N-Ch 2

1

1.5

2

Gate-Source Leakage

N-Ch 1

-

-

± 100

nA

N-Ch 2

-

-

± 100

Zero Gate Voltage Drain Current

N-Ch 1

-

-

1

μA

N-Ch 2

-

-

1

N-Ch 1

-

-

50

N-Ch 2

-

-

50

N-Ch 1

-

-

500

N-Ch 2

-

-

500

≥ 5 V

N-Ch 1

20

-

-

A

≥ 5 V

N-Ch 2

30

-

-

N-Ch 1

-

0.0052

0.0065

Ω

N-Ch 2

-

0.0025

0.0033

N-Ch 1

-

0.0075

-

N-Ch 2

-

0.0031

-

N-Ch 1

-

0.0085

-

N-Ch 2

-

0.0038

-

N-Ch 1

-

0.0075

0.0093

N-Ch 2

-

0.0034

0.0045

N-Ch 1

-

49

-

S

N-Ch 2

-

91

-

Input Capacitance

N-Ch 1

-

777

975

pF

N-Ch 2

-

2018

2525

Output Capacitance

N-Ch 1

-

539

675

N-Ch 2

-

1313

1645

Reverse Transfer Capacitance

N-Ch 1

-

270

340

N-Ch 2

-

683

855

N-Ch 1

-

14.5

22

nC

N-Ch 2

-

35.9

54

N-Ch 1

-

1.7

-

N-Ch 2

-

4.1

-

N-Ch 1

-

2.1

-

N-Ch 2

-

4.3

-

Gate Resistance

f = 1 MHz

N-Ch 1

1.3

2.6

4

Ω

N-Ch 2

0.5

1.1

1.7