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CSD16327Q3 Datasheet(PDF) 3 Page - Texas Instruments |
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CSD16327Q3 Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 13 page  3 CSD16327Q3 www.ti.com SLPS371A – DECEMBER 2011 – REVISED SEPTEMBER 2016 Product Folder Links: CSD16327Q3 Submit Documentation Feedback Copyright © 2011–2016, Texas Instruments Incorporated 5 Specifications 5.1 Electrical Characteristics TA = 25°C (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 25 V IDSS Drain-to-source leakage current VGS = 0 V, VDS = 20 V 1 μA IGSS Gate-to-source leakage current VDS = 0 V, VGS = +10 / –8 V 100 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 0.9 1.2 1.4 V RDS(on) Drain-to-source on-resistance VGS = 3 V, ID = 24 A 5 6.5 m Ω VGS = 4.5 V, ID = 24 A 4 4.8 VGS = 8 V, ID = 24 A 3.4 4.0 gfs Transconductance VDS = 12.5 V, ID = 24 A 96 S DYNAMIC CHARACTERISTICS CISS Input capacitance VGS = 0 V, VDS = 12.5 V, f = 1 MHz 1020 1300 pF COSS Output capacitance 740 960 pF CRSS Reverse transfer capacitance 50 65 pF Rg Series gate resistance 1.4 2.8 Ω Qg Gate charge total (4.5 V) VDS = 12.5 V, ID = 24 A 6.2 8.4 nC Qgd Gate charge gate-to-drain 1.1 nC Qgs Gate charge gate-to-source 1.8 nC Qg(th) Gate charge at Vth 1 nC QOSS Output charge VDS = 12.5 V, VGS = 0 V 14 nC td(on) Turnon delay time VDS = 12.5 V, VGS = 4.5 V ID = 24 A RG = 2 Ω 5.3 ns tr Rise time 15 ns td(off) Turnoff delay time 13 ns tf Fall time 6.3 ns DIODE CHARACTERISTICS VSD Diode forward voltage IS = 24 A, VGS = 0 V 0.85 1 V Qrr Reverse recovery charge VDD = 12.5 V, IF = 24 A, di/dt = 300 A/μs 21 nC trr Reverse recovery time VDD = 12.5 V, IF = 24 A, di/dt = 300 A/μs 16 ns (1) RθJC is determined with the device mounted on a 1-in 2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in (3.81-cm × 3.81- cm), 0.06-in (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design. (2) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu. 5.2 Thermal Information TA = 25°C (unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-case thermal resistance(1) 1.7 °C/W RθJA Junction-to-ambient thermal resistance(1)(2) 55 °C/W |
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