Electronic Components Datasheet Search |
|
CEE02N6G Datasheet(PDF) 1 Page - Chino-Excel Technology |
|
CEE02N6G Datasheet(HTML) 1 Page - Chino-Excel Technology |
1 / 4 page N-Channel Enhancement Mode Field Effect Transistor CEE02N6G FEATURES 600V, 2.0A, RDS(ON) = 5.0Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-126 package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM 600 0.44 56 8 2 ±30 V W A A V W/ C 1 CEE SERIES TO-126 Lead-free plating ; RoHS compliant. http://www.cetsemi.com Rev 1. 2012.Mar Details are subject to change without notice . Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 2.3 RθJC RθJA S G D |
Similar Part No. - CEE02N6G |
|
Similar Description - CEE02N6G |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |