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HGTG30N60C3D Datasheet(PDF) 3 Page - Fairchild Semiconductor

Part # HGTG30N60C3D
Description  63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

HGTG30N60C3D Datasheet(HTML) 3 Page - Fairchild Semiconductor

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©2001 Fairchild Semiconductor Corporation
HGTG30N60C3D Rev. B
Diode Reverse Recovery Time
trr
IEC = 30A, dIEC/dt = 100A/µs
-
52
60
ns
IEC = 1.0A, dIEC/dt = 100A/µs
-
42
50
ns
Thermal Resistance
RθJC
IGBT
-
-
0.6
oC/W
Diode
-
-
1.3
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). The HGTG30N60C3D was tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
diode losses.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
VGE, GATE TO EMITTER VOLTAGE (V)
TC = 25
oC
TC = -40
oC
TC = 150
oC
46
8
10
12
0
25
50
75
100
125
150
PULSE DURATION = 250
µs
DUTY CYCLE <0.5%, VCE = 10V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250
µs, DUTY CYCLE <0.5%, TC = 25oC
0
02
4
6
8
10
10.0V
9.5V
9.0V
8.5V
25
50
75
100
125
150
7.0V
7.5V
8.0V
12.0V
VGE = 15.0V
0
25
50
01
2
3
4
5
75
100
125
150
PULSE DURATION = 250
µs
DUTY CYCLE <0.5%, VGE = 10V
TC = -40
oC
TC = 25
oC
TC = 150
oC
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0
25
50
75
125
150
0
1
2
345
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
100
PULSE DURATION = 250
µs
DUTY CYCLE <0.5%
VGE = 15V
TC = 150
oC
TC = 25
oC
TC = -40
oC
HGTG30N60C3D


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