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HGTG30N60C3D Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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HGTG30N60C3D Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page ©2001 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B Diode Reverse Recovery Time trr IEC = 30A, dIEC/dt = 100A/µs - 52 60 ns IEC = 1.0A, dIEC/dt = 100A/µs - 42 50 ns Thermal Resistance RθJC IGBT - - 0.6 oC/W Diode - - 1.3 oC/W NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTG30N60C3D was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Typical Performance Curves FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE VGE, GATE TO EMITTER VOLTAGE (V) TC = 25 oC TC = -40 oC TC = 150 oC 46 8 10 12 0 25 50 75 100 125 150 PULSE DURATION = 250 µs DUTY CYCLE <0.5%, VCE = 10V VCE, COLLECTOR TO EMITTER VOLTAGE (V) PULSE DURATION = 250 µs, DUTY CYCLE <0.5%, TC = 25oC 0 02 4 6 8 10 10.0V 9.5V 9.0V 8.5V 25 50 75 100 125 150 7.0V 7.5V 8.0V 12.0V VGE = 15.0V 0 25 50 01 2 3 4 5 75 100 125 150 PULSE DURATION = 250 µs DUTY CYCLE <0.5%, VGE = 10V TC = -40 oC TC = 25 oC TC = 150 oC VCE, COLLECTOR TO EMITTER VOLTAGE (V) 0 25 50 75 125 150 0 1 2 345 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 100 PULSE DURATION = 250 µs DUTY CYCLE <0.5% VGE = 15V TC = 150 oC TC = 25 oC TC = -40 oC HGTG30N60C3D |
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