IDT70V659S15BF datasheet(7/23 Pages) IDT

Part #	IDT70V659S15BF

Description	HIGH-SPEED 3.3V 128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

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Manufacturer	IDT [Integrated Device Technology]

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7

IDT70V659S

Preliminary

High-Speed 3.3V 128K x 36 Asynchronous Dual-Port Static RAM

Industrial and Commercial Temperature Ranges

Maximum Operating

Temperature and Supply Voltage(1)

Recommended DC Operating

Conditions with VDDQ at 2.5V

Absolute Maximum Ratings(1)

NOTES:

1. VIL > -1.5V for pulse width less than 10 ns.

2. VTERM must not exceed VDDQ + 100mV.

3. To select operation at 2.5V levels on the I/Os and controls of a given port, the

OPT pin for that port must be set to VIL (0V), and VDDQX for that port must be supplied

as indicated above.

NOTES:

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions above those indicated

in the operational sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect reliability.

2. VTERM must not exceed VDD + 150mV for more than 25% of the cycle time or

4ns maximum, and is limited to < 20mA for the period of VTERM > VDD + 150mV.

NOTE:

1. This is the parameter TA. This is the "instant on" case temperature.

Recommended DC Operating

Conditions with VDDQ at 3.3V

NOTES:

1. VIL > -1.5V for pulse width less than 10 ns.

2. VTERM must not exceed VDDQ + 150mV.

3. To select operation at 3.3V levels on the I/Os and controls of a given port, the

OPT pin for that port must be set to VIH (3.3V), and VDDQX for that port must be

supplied as indicated above.

Grade

Ambient

Temperature

GND

VDD

Commercial

0OC to +70OC0V

3.3V

+ 150mV

Industrial

-40OC to +85OC0V

3.3V

+ 150mV

4869 tbl 04

Symbol

Rating

Commercial

& Industrial

Unit

VTERM(2)

Terminal Voltage

with Respect to

GND

-0.5 to +4.6

V

TBIAS

Temperature

Under Bias

-55 to +125

oC

TSTG

Storage

Temperature

-65 to +150

oC

IOUT

DC Output Current

50

mA

4869 tbl 05

Symbol

Parameter

Min.

Typ.

Max.

Unit

VDD

Core Supply Voltage

3.15

3.3

3.45

V

VDDQ

I/O Supply Voltage

(3)

2.4

2.5

2.6

V

VSS

Ground

0

V

VIH

Input High Voltage

(3)

(Address & Control Inputs)

1.7

____

VDDQ + 100mV

(2)

V

VIH

Input High Voltage - I/O

(3)

1.7

____

VDDQ + 100mV

(2)

V

VIL

Input Low Voltage

-0.5

(1)

____

0.7

V

4869 tbl 06

Symbol

Parameter

Min.

Typ.

Max.

Unit

VDD

Core Supply Voltage

3.15

3.3

3.45

V

VDDQ

I/O Supply Voltage(3)

3.15

3.3

3.45

V

VSS

Ground

0

V

VIH

Input High Voltage

(Address & Control Inputs)(3)

2.0

____

VDDQ + 150mV(2)

V

VIH

Input High Voltage - I/O(3)

2.0

____

VDDQ + 150mV(2)

V

VIL

Input Low Voltage

-0.3(1)

____

0.8

V

4869 tbl 07

NOTES:

1. These parameters are determined by device characterization, but are not

production tested.

2. 3dV references the interpolated capacitance when the input and output switch

from 0V to 3V or from 3V to 0V.

3. COUT also references CI/O.

Capacitance(1)

(TA = +25°C, F = 1.0MHZ) PQFP ONLY

Symbol

Parameter

Conditions

(2)

Max.

Unit

CIN

Input Capacitance

VIN = 3dV

8

pF

COUT(3)

Output Capacitance

VOUT = 3dV

10.5

pF

4869 tbl 08

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