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IRF6618TR1 Datasheet(PDF) 1 Page - International Rectifier |
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IRF6618TR1 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 9 page  www.irf.com 1 11/3/04 IRF6618/IRF6618TR1 HEXFET® Power MOSFET Notes through are on page 9 l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques Description The IRF6618 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6618 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6618 has been optimized for parameters that are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6618 offers particularly low Rds(on) and high Cdv/ dt immunity for synchronous FET applications. VDSS RDS(on) max Qg 30V 2.2m Ω@VGS = 10V 43 nC 3.4m Ω@VGS = 4.5V Applicable DirectFET Package/Layout Pad (see p.8,9 for details) SQ SX ST MQ MX MT DirectFET ISOMETRIC MT Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V A ID @ TA = 70°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TA = 25°C Power Dissipation g PD @TA = 70°C Power Dissipation g W PD @TC = 25°C Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Avalanche Characteristics Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy d ––– 210 mJ IAR Avalanche Current à ––– 24 A Thermal Resistance Parameter Typ. Max. Units RθJA Junction-to-Ambient fj ––– 45 RθJA Junction-to-Ambient g 12.5 ––– RθJA Junction-to-Ambient h 20 ––– °C/W RθJC Junction-to-Case i ––– 1.4 RθJ-PCB Junction-to-PCB Mounted 1.0 ––– Max. 30 24 240 ±20 30 170 -40 to + 150 2.8 0.022 1.8 89 PD - 94726D |
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