TPS9103

POWER SUPPLY FOR GaAs POWER AMPLIFIERS

SLVS131A − OCTOBER 1995 − REVISED JULY 1996

3

POST OFFICE BOX 655303

POST OFFICE BOX 1443

TPS9103Y chip information

This chip, when properly assembled, displays characteristics similar to the TPS9103. Thermal compression or

ultrasonic bonding may be used on the doped-aluminum bonding pads. The chips may be mounted with

conductive epoxy or a gold-silicon preform. Contact factory for die sales.

BONDING PAD ASSIGNMENTS

CHIP THICKNESS: 15 TYPICAL

BONDING PADS: 4

× 4 MINIMUM

TJ max = 150°C

TOLERANCES ARE

±10%.

ALL DIMENSIONS ARE IN MILS.

83

116

(6)

(7)

TPS9103Y

C1 +

C1 −

BATT_IN

PGP

EN

OSC_EN

SW_EN

CLK

GATE_BIAS

BATT_OUT

BCLK

PG

VCC VDD

20

2

GND

10, 17

1

14, 15, 16

18

4

3

5, 6, 7

8

9

11

12

13

19

(2)

(3)

(1 )

(20)

(19)

(18)

(4)

(5)

(6)

(7)

(17)

(16)

(15)

(14)

(8)

(9)

(10)

(11)

(12)

(13)