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TPS9103 Datasheet(PDF) 3 Page - Texas Instruments |
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TPS9103 Datasheet(HTML) 3 Page - Texas Instruments |
3 / 22 page TPS9103 POWER SUPPLY FOR GaAs POWER AMPLIFIERS SLVS131A − OCTOBER 1995 − REVISED JULY 1996 3 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 TPS9103Y chip information This chip, when properly assembled, displays characteristics similar to the TPS9103. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. The chips may be mounted with conductive epoxy or a gold-silicon preform. Contact factory for die sales. BONDING PAD ASSIGNMENTS CHIP THICKNESS: 15 TYPICAL BONDING PADS: 4 × 4 MINIMUM TJ max = 150°C TOLERANCES ARE ±10%. ALL DIMENSIONS ARE IN MILS. 83 116 (6) (7) TPS9103Y C1 + C1 − BATT_IN PGP EN OSC_EN SW_EN CLK GATE_BIAS BATT_OUT BCLK PG VCC VDD 20 2 GND 10, 17 1 14, 15, 16 18 4 3 5, 6, 7 8 9 11 12 13 19 (2) (3) (1 ) (20) (19) (18) (4) (5) (6) (7) (17) (16) (15) (14) (8) (9) (10) (11) (12) (13) |
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Similar Description - TPS9103 |
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