Electronic Components Datasheet Search |
|
K7A403600B-QC Datasheet(PDF) 1 Page - Samsung semiconductor |
|
K7A403600B-QC Datasheet(HTML) 1 Page - Samsung semiconductor |
1 / 18 page K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM - 1 - Rev 1.0 Nov 2001 K7A403200B K7A403600B Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Remark Preliminary Preliminary Preliminary Preliminary Final History 1. Initial draft 1. Changed DC parameters Icc ; from 350mA to 290mA at -16, from 330mA to 270mA at -15, from 300mA to 250mA at -14, ISB1 ; from 100mA to 80mA 1. Delete Pass-Through 1. Add x32 org. and industrial temperature 1. Final spec release 2. Changed Pin Capacitance - Cin ; from 5pF to 4pF - Cout ; from 7pF to 6pF Draft Date May. 15. 2001 June. 12. 2001 June.25. 2001 Aug. 11. 2001 Nov. 15. 2001 The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques- tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. Rev. No 0.0 0.1 0.2 0.3 1.0 |
Similar Part No. - K7A403600B-QC |
|
Similar Description - K7A403600B-QC |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |