 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
AS4C1M16S Datasheet(PDF) 11 Page - Alliance Semiconductor Corporation |
|
||||||||||||||||||||||||||||||
AS4C1M16S Datasheet(HTML) 11 Page - Alliance Semiconductor Corporation |
|
|
11 / 53 page  Col n COMMAND NOP NOP AS4C1M16S CLK T0 T1 T2 T3 T4 T5 T6 T7 T8 COMMAND NOP WRITE A READ B NOP NOP NOP NOP NOP NOP CAS# Latency=2 tCK2, DQ DIN A0 don’t care DOUT B0 DOUT B1 DOUT B2 DOUT B3 CAS# Latency=3 tCK3, DQ DIN A0 don’t care don’t care DOUT B0 DOUT B1 DOUT B2 DOUT B3 Input data must be removed from the DQ at least one clock cycle before the Read data appears on the outputs to avoid data contention Figure 12. Write Interrupted by a Read (Burst Length = 4, CAS# Latency = 2, 3) The BankPrecharge/PrechargeAll command that interrupts a write burst without the auto precharge function should be issued m cycles after the clock edge in which the last data-in element is registered, where m equals tWR/tCK rounded up to the next whole number. In addition, the LDQM/UDQM signals must be used to mask input data, starting with the clock edge following the last data-in element and ending with the clock edge on which the BankPrecharge/PrechargeAll command is entered (refer to the following figure). CLK T0 T1 T2 T3 T4 T5 T6 T7 DQM COMMAND tRP WRITE NOP NOP Precharge NOP NOP Activate NOP ADDRESS Bank DIN DIN tWR Bank (s) ROW DQ n N+1 Don’t Care Note: The LDQM/UDQM can remain low in this example if the length of the write burst is 1 or 2. Figure 13. Write to Precharge 7 Write and AutoPrecharge command (refer to the following figure) (RAS# = "H", CAS# = "L", WE# = "L", A11 = “V”, A10 = "H", A0-A7 = Column Address) The Write and AutoPrecharge command performs the precharge operation automatically after the write operation. Once this command is given, any subsequent command can not occur within a time delay of {(burst length -1) + tWR + tRP (min.)}. At full-page burst, only the write operation is performed in this command and the auto precharge function is ignored. CLK T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 Bank A Activate WRITE A Auto Precharge NOP NOP NOP NOP NOP tDAL Bank A Activate DQ DIN A0 DIN A1 tDAL=tWR+tRP Begin AutoPrecharge Bank can be reactivated at completion of tDAL Figure 14. Burst Write with Auto-Precharge (Burst Length = 2) 11 |
Similar Part No. - AS4C1M16S |
|
Similar Description - AS4C1M16S |
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
