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MBRF20150CL Datasheet(PDF) 1 Page - Mospec Semiconductor |
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MBRF20150CL Datasheet(HTML) 1 Page - Mospec Semiconductor |
1 / 2 page MOSPE MBRF20150CL C rietary barrier technology allows for tion up to 175℃ junction temperature. Typical application are in sw lies such as adaptors, DC/DC converters, free- wh tion diodes. Low Stored Charge Majority Carrier Conduction. Plastic Material used Carries Underw 2002/95/EC directives aracteristic Sy l MBRF20150CL Unit Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Refractory metal capable of high emperature operation metal. The prop t reliable opera itching Mode Power Supp c eeling and polarity prote Features * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. * Guard-Ring for Stress Protection. * Low Power Loss & High efficiency. * 175℃ Operating Junction Temperature * * riters Laboratory Flammability Classification 94V-O SCH R 20 AMPERES 150 VOLTS O IE TTKY BARR RECTI IERS F ITO-220AB *In compliance with EU RoHs MAXIMUM RATINGS Ch mbo Peak Repetitive Reverse Voltage VRWM V Working Peak Reverse Voltage DC Blocking Voltage VRRM VR 150 RMS Reverse Voltage E MILLIM TERS DIM M VR(RMS) 105 V Average Rectifier Forward Current otal Device (Rated V ), T =125 MIN AX A 14.90 15.15 B 1 1 3.35 3.55 C ( per diode ) T R C ℃ IF(AV) 20 A 10 Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz) IFM 20 A Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) IFSM 150 A 1 1 0.00 0.10 D 6.55 6.65 E 2.65 2.75 F 1.55 1.65 G 1.15 1.25 H 0.55 0.65 I 2.50 2.60 J 3.00 3.20 K 1.10 1.20 L 0.55 0.65 M 4.40 4.60 N Operating and Storage Junction Temperature Range TJ , Tstg -65 to +175 ℃ 1.15 1.25 O 3.35 3.45 P 2.65 2.75 THERMAL RESISTANCES Typical Thermal Resistance junction to case ( per device ) Q 3.15 3.25 Rθjc 3.6 ℃ /w ELECTRIAL CHARACTERISTICS Characteristic R 3.60 3.80 Sy l R Unit mbo MB F20150CL M rward Voltage ( per diode ) aximum Instantaneous Fo ( IF =0.1 Amp TC = 25℃) --- 0.29 0.35 ( IF =5.0 Amp TC = 25℃) --- 0.77 0.86 ( IF =10 Amp TC = 25℃) VF --- 0.91 0.95 V Maximum Instantaneous Rev ( Rated DC Voltage, TC = 2 erse Current 5℃) IR 0.08 0.1 10 30 mA ( Rated DC Voltage, TC = 125℃) |
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