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N34TS04MU3ETG Datasheet(PDF) 2 Page - ON Semiconductor |
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N34TS04MU3ETG Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 18 page N34TS04 www.onsemi.com 2 Table 1. ABSOLUTE MAXIMUM RATINGS Parameter Rating Units Operating Temperature −45 to +130 °C Storage Temperature −65 to +150 °C Voltage on any pin (except A0) with respect to Ground (Note 1) −0.5 to +6.5 V Voltage on pin A0 with respect to Ground −0.5 to +10.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than −0.5 V or higher than VCC + 0.5 V. The A0 pin can be raised to a HV level for SWP command execution. SCL and SDA inputs can be raised to the maximum limit, irrespective of VCC. Table 2. RELIABILITY CHARACTERISTICS Symbol Parameter Min Units NEND (Note 2) Endurance (EEPROM) 1,000,000 Write Cycles TDR Data Retention (EEPROM) 100 Years 2. Page Mode, VCC = 2.5 V, 25°C Table 3. TEMPERATURE CHARACTERISTICS (VCC = 2.2 V to 3.6 V, TA = −20°C to +125°C, unless otherwise specified) Parameter Test Conditions/Comments Max Unit Temperature Reading Error +75 °C ≤ TA ≤ +95°C, active range ±1.0 °C +40 °C ≤ TA ≤ +125°C, monitor range ±2.0 °C −20 °C ≤ TA ≤ +125°C, sensing range ±3.0 °C ADC Resolution 12 Bits Temperature Resolution 0.0625 °C Conversion Time 100 ms Thermal Resistance (Note 3) qJA Junction−to−Ambient (Still Air) 92 °C/W 3. Power Dissipation is defined as PJ = (TJ − TA)/qJA, where TJ is the junction temperature and TA is the ambient temperature. The thermal resistance value refers to the case of a package being used on a standard 2−layer PCB. Table 4. D.C. OPERATING CHARACTERISTICS (VCC = 1.7 V to 5.5 V, TA = −40°C to +125°C, unless otherwise specified) Symbol Parameter Test Conditions/Comments Min Max Unit ICC Supply Current TS active, SPD and Bus idle 1000 mA SPD Write, TS shut−down 1000 mA ISHDN Standby Current TS shut−down; SPD and Bus idle 10 mA ILKG I/O Pin Leakage Current Pin at GND or VCC 2 mA VIL Input Low Voltage VCC ≥ 2.2 V −0.5 0.3 x VCC V VCC < 2.2 V −0.05 0.25 x VCC VIH Input High Voltage VCC ≥ 2.2 V 0.7 x VCC VCC + 0.5 V VCC < 2.2 V 0.75 x VCC VCC + 0.5 VOL (Note 4) Output Low Voltage IOL = 3 mA, VCC ≥ 2.2 V 0.4 V IOL = 1 mA, VCC < 2.2 V 0.2 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The device is able to handle RL values corresponding to the specified rise time (see Figure 2). |
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