NTD30N02T4 datasheet(2/6 Pages) ONSEMI

Part #	NTD30N02T4

Description	Power MOSFET 30 Amps, 24 Volts

Download	6 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

2 / 6 page

NTD30N02

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

24

−

26.5

25.5

−

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 24 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

−

0.8

1.0

10

mAdc

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)

IGSS

−

±100

nAdc

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage (Note 3)

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

−

2.1

−4.1

3.0

−

Vdc

mV/

°C

Static Drain−to−Source On−Resistance (Note 3)

(VGS = 10 Vdc, ID = 30 Adc)

(VGS = 10 Vdc, ID = 20 Adc)

(VGS = 4.5 Vdc, ID = 15 Adc)

RDS(on)

−

11.2

20

14.5

24

m

W

Forward Transconductance (Note 3) (VDS = 10 Vdc, ID = 15 Adc)

gFS

−

20

−

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

20 Vd

V

0Vd

Ciss

−

1000

−

pF

Output Capacitance

(VDS = 20 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

−

425

−

Transfer Capacitance

f = 1.0 MHz)

Crss

−

175

−

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

td(on)

−

7.0

15

ns

Rise Time

(VDD = 20 Vdc, ID = 30 Adc,

tr

−

28

55

Turn−Off Delay Time

(VDD 20 Vdc, ID

30 Adc,

VGS = 10 Vdc, RG = 2.5 Ω)

td(off)

−

22

35

Fall Time

tf

−

12

20

Turn−On Delay Time

td(on)

−

12.5

−

ns

Rise Time

(VDD = 20 Vdc, ID = 15 Adc,

tr

−

115

−

Turn−Off Delay Time

(VDD 20 Vdc, ID

15 Adc,

VGS = 4.5 Vdc, RG = 2.5 Ω)

td(off)

−

15

−

Fall Time

tf

−

17

−

Gate Charge

(V

20 Vd

I

30 Ad

QT

−

14.4

20

nC

(VDS = 20 Vdc, ID = 30 Adc,

VGS = 4.5 Vdc) (Note 3)

Q1

−

4.0

−

VGS = 4.5 Vdc) (Note 3)

Q2

−

8.5

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 15 Adc, VGS = 0 Vdc)

(IS = 30 Adc, VGS = 0 Vdc) (Note 3)

(IS = 15 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

−

0.95

1.10

0.80

1.2

−

Vdc

Reverse Recovery Time

(I

30 Ad

V

0Vd

trr

−

30

−

ns

(IS = 30 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs) (Note 3)

ta

−

14.5

−

dIS/dt = 100 A/µs) (Note 3)

tb

−

15.5

−

Reverse Recovery Stored Charge

QRR

−

0.013

−

mC

3. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

Similar Part No. - NTD30N02T4

Manufacturer	Part #	Datasheet	Description
VBsemi Electronics Co.,...	NTD30N02T4	1,015Kb / 8P	N-Channel 30-V (D-S) MOSFET
VBsemi Electronics Co.,...	NTD30N02T4G	1,015Kb / 8P	N-Channel 30-V (D-S) MOSFET

More results

Similar Description - NTD30N02T4

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NTD30N02G	134Kb / 5P	Power MOSFET 30 Amps, 24 Volts February, 2006 ??Rev. 3
	NTB90N02	72Kb / 8P	Power MOSFET 90 Amps, 24 Volts March, 2005 ??Rev. 2
	NTB90N02	75Kb / 9P	Power MOSFET 90 Amps, 24 Volts October, 2003 ??Rev. 1
	NTB75N03-6G	80Kb / 7P	Power MOSFET 75 Amps, 30 Volts August, 2005 ??Rev. 6
	NTB75N03L09T4G	119Kb / 8P	Power MOSFET 75 Amps, 30 Volts August, 2013 ??Rev. 13
	NTB4302	71Kb / 8P	Power MOSFET 74 Amps, 30 Volts October, 2003 ??Rev. 1
	NTB75N03-006	80Kb / 7P	Power MOSFET 75 Amps, 30 Volts August, 2005 ??Rev. 6
	NTMS3P03R2	148Kb / 7P	Power MOSFET -3.05 Amps, -30 Volts March, 2006 ??Rev. 2
	NTTS2P03R2	75Kb / 6P	Power MOSFET -2.48 Amps, -30 Volts June, 2005 ??Rev. 2
	MMDF6N03HDR2	236Kb / 10P	Power MOSFET 6 Amps, 30 Volts August, 2006 ??Rev. 4

More results

NTD30N02T4 Datasheet(PDF) 2 Page - ON Semiconductor

NTD30N02T4 Datasheet(HTML) 2 Page - ON Semiconductor

Similar Part No. - NTD30N02T4

Similar Description - NTD30N02T4

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL