NTD30N02T4 datasheet(3/6 Pages) ONSEMI

Part #	NTD30N02T4

Description	Power MOSFET 30 Amps, 24 Volts

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Manufacturer	ONSEMI [ON Semiconductor]

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NTD30N02

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3

10

40

30

0.03

0.02

0.01

20

50

0.04

0.07

60

1.6

1.2

1.4

1

0.8

0.6

0.01

100

08

20

2

1

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

0

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

25

4

0.01

0

36

Figure 3. On−Resistance versus

Gate−to−Source Voltage

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

ID, DRAIN CURRENT (AMPS)

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Drain−to−Source Leakage Current

versus Voltage

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

60

−50

50

25

0

−25

75

125

100

18

416

12

24

8

3

10

30

8 V

VDS ≥ 10 V

TJ = 25°C

TJ = −55°C

TJ = 100°C

VGS = 10 V

150

VGS = 0 V

ID = 15 A

VGS = 10 V

40

0.02

0.04

VGS = 9 V

ID = 15 A

TJ = 25°C

10

TJ = 150°C

TJ = 100°C

10

0

60

30

40

4

TJ = 25°C

20

10

7 V

5 V

4 V

3.4 V

3 V

45

6

7

2

3

5

0.03

78

0.05

0.06

50

3.6 V

4.2 V

4.6 V

5.4 V

6 V

TJ = 25°C

67

20

50

9

VGS = 4.5 V

1

0.1

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