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NE5517 Datasheet(PDF) 7 Page - ON Semiconductor |
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NE5517 Datasheet(HTML) 7 Page - ON Semiconductor |
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7 / 15 page  NE5517, NE5517A, AU5517 http://onsemi.com 7 APPLICATIONS 4, 13 2, 15 3, 14 − + NE5517 11 6 5, 12 1, 16 +15V −15V 7, 10 8, 9 INPUT OUTPUT 390pF −15V 51W 0.01mF 0.001mF 0.01mF Figure 20. Unity Gain Follower 10kW 1.3kW 10kW 62kW 5kW CIRCUIT DESCRIPTION The circuit schematic diagram of one-half of the AU5517/NE5517, a dual operational transconductance amplifier with linearizing diodes and impedance buffers, is shown in Figure 21. Transconductance Amplifier The transistor pair, Q4 and Q5, forms a transconductance stage. The ratio of their collector currents (I4 and I5, respectively) is defined by the differential input voltage, VIN, which is shown in Equation 1. VIN + KT q In I5 I4 (eq. 1) Where VIN is the difference of the two input voltages KT ≅ 26 mV at room temperature (300°k). Transistors Q1, Q2 and diode D1 form a current mirror which focuses the sum of current I4 and I5 to be equal to amplifier bias current IB: I4 ) I5 + IB (eq. 2) If VIN is small, the ratio of I5 and I4 will approach unity and the Taylor series of In function can be approximated as KT q In I5 I4 [ KT q I5 * I4 I4 (eq. 3) and I4 ^ I5 ^ IB KT q In I5 I4 [ KT q I5 * I4 1 2IB + 2KT q I5 * I4 IB + VIN (eq. 4) I5 * I4 + VIN IB q 2KT The remaining transistors (Q6 to Q11) and diodes (D4 to D6) form three current mirrors that produce an output current equal to I5 minus I4. Thus: VIN IB q 2KT + IO (eq. 5) The term IB q 2KT is then the transconductance of the amplifier and is proportional to IB. Figure 21. Circuit Diagram of NE5517 V+ 11 D4 Q6 Q7 2,15 D2 Q4 Q5 D3 −INPUT 4,13 +INPUT 3,14 AMP BIAS INPUT 1,16 Q2 Q1 D1 V− 6 Q10 D6 Q11 VOUTPUT 5,12 Q9 Q8 D5 Q14 Q15 Q16 R1 D7 D8 Q3 7,10 Q12 Q13 8,9 |
Similar Part No. - NE5517_13 |
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Similar Description - NE5517_13 |
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