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PSS8050 Datasheet(PDF) 2 Page - NXP Semiconductors |
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PSS8050 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 10 page 2004 Aug 10 2 Philips Semiconductors Product specification NPN medium power 25 V transistor PSS8050 FEATURES • High total power dissipation • High current capability. APPLICATIONS • Medium power switching and muting • Amplification • Portable radio output amplifier (class-B, push-pull). DESCRIPTION NPN transistor in a SOT54 (TO-92) plastic package. PNP complement: PSS8550. MARKING QUICK REFERENCE DATA PINNING TYPE NUMBER MARKING CODE PSS8050C S8050C PSS8050D S8050D SYMBOL PARAMETER MAX. UNIT VCEO collector-emitter voltage 25 V IC collector current (DC) 1.5 A PIN DESCRIPTION 1 collector 2 base 3 emitter handbook, halfpage 1 3 2 MSB033 Fig.1 Simplified outline (SOT54). LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 3. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. Operated under pulsed conditions: pulse width tp ≤ 1 s; duty cycle δ≤ 0.75%. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 25 V VEBO emitter-base voltage open collector − 6V IC collector current (DC) − 1.5 A ICM peak collector current − 2A IB base current (DC) − 300 mA IBM peak base current − 1A Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 850 mW Tamb ≤ 25 °C; note 2 − 900 mW Tamb ≤ 25 °C; note 3 − 1W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
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