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PZT751T1G Datasheet(PDF) 2 Page - ON Semiconductor |
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PZT751T1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page PZT751T1 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 60 − Vdc Collector−Emitter Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 80 − Vdc Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − Vdc Base−Emitter Cutoff Current (VEB = 4.0 Vdc) IEBO − 0.1 mAdc Collector−Base Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO − 100 nAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 50 mAdc, VCE = 2.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) (IC = 1.0 Adc, VCE = 2.0 Vdc) (IC = 2.0 Adc, VCE = 2.0 Vdc) hFE 75 75 75 40 − − − − − Collector−Emitter Saturation Voltages (IC = 2.0 Adc, IB = 200 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) VCE(sat) − − 0.5 0.3 Vdc Base−Emitter Voltages (IC = 1.0 Adc, VCE = 2.0 Vdc) VBE(on) − 1.0 Vdc Base−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc) VBE(sat) − 1.2 Vdc Current−Gain−Bandwidth (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT 75 − MHz 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%. |
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