PZT751T1G datasheet(2/6 Pages) ONSEMI

Part #	PZT751T1G

Description	PNP Silicon Planar Epitaxial Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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PZT751T1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristics

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 10 mAdc, IB = 0)

V(BR)CEO

60

−

Vdc

Collector−Emitter Breakdown Voltage

(IC = 100 mAdc, IE = 0)

V(BR)CBO

80

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

5.0

−

Vdc

Base−Emitter Cutoff Current

(VEB = 4.0 Vdc)

IEBO

−

0.1

mAdc

Collector−Base Cutoff Current

(VCB = 80 Vdc, IE = 0)

ICBO

−

100

nAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 50 mAdc, VCE = 2.0 Vdc)

(IC = 500 mAdc, VCE = 2.0 Vdc)

(IC = 1.0 Adc, VCE = 2.0 Vdc)

(IC = 2.0 Adc, VCE = 2.0 Vdc)

hFE

75

40

−

Collector−Emitter Saturation Voltages

(IC = 2.0 Adc, IB = 200 mAdc)

(IC = 1.0 Adc, IB = 100 mAdc)

VCE(sat)

−

0.5

0.3

Vdc

Base−Emitter Voltages

(IC = 1.0 Adc, VCE = 2.0 Vdc)

VBE(on)

−

1.0

Vdc

Base−Emitter Saturation Voltage

(IC = 1.0 Adc, IB = 100 mAdc)

VBE(sat)

−

1.2

Vdc

Current−Gain−Bandwidth

(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

fT

75

−

MHz

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.

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