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BR25S256FJ-WTR Datasheet(PDF) 2 Page - Rohm |
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BR25S256FJ-WTR Datasheet(HTML) 2 Page - Rohm |
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2 / 35 page  Datasheet 2/31 BR25Sxxx-W Series (32K 64K 128K 256K) TSZ02201-0R2R0G100330-1-2 21.AUG.2012 Rev.001 ©2012 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 www.rohm.com ●Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Ratings Unit Remarks Supply Voltage VCC -0.3 to +6.5 V 450 (SOP8) When using at Ta=25℃ or higher 4.5mW to be reduced per 1℃. 450 (SOP-J8) When using at Ta=25℃ or higher 4.5mW to be reduced per 1℃. 300 (SSOP-B8) When using at Ta=25℃ or higher 3.0mW to be reduced per 1℃. 330 (TSSOP-B8) When using at Ta=25℃ or higher 3.3mW to be reduced per 1℃. 310 (TSSOP-B8J) When using at Ta=25℃ or higher 3.1mW to be reduced per 1℃. 310 (MSOP8) When using at Ta=25℃ or higher 3.1mW to be reduced per 1℃. Power Dissipation Pd 300 (VSON008X2030) mW When using at Ta=25℃ or higher 3.0mW to be reduced per 1℃. Storage Temperature Tstg －65 to +125 ℃ Operating Temperature Topr －40 to +85 ℃ Terminal Voltage ‐ -0.3 to Vcc+0.3 V ●Memory cell characteristics (Ta=25°C , Vcc=1.7V to 5.5V) Limits Parameter Min. Typ. Max. Unit Number of data rewrite times *1 1,000,000 - - Times Data hold years *1 40 - - Years *1 Not 100% TESTED ●Recommended Operating Ratings Parameter Symbol Ratings Unit Power source voltage Vcc 1.7 to 5.5 Input voltage VIN 0 to Vcc V ●Input / output capacity (Ta=25°C, frequency=5MHz) Parameter Symbol Min. Max. Unit Conditions Input capacity *1 CIN － 8 VIN=GND Output capacity *1 COUT － 8 pF VOUT=GND *1 Not 100% TESTED. ●Electrical characteristics (Unless otherwise specified, Ta=-40°C to +85°C, Vcc=1.7V to 5.5V) Limits Parameter Symbol Min. Typ. Max. Unit Conditions “H” Input Voltage1 VIH1 0.7xVcc － Vcc+0.3 V 1.7≦Vcc≦5.5V “L” Input Voltage1 VIL1 -0.3 － 0.3xVcc V 1.7≦Vcc≦5.5V “L” Output Voltage1 VOL1 0 － 0.4 V IOL=2.1mA, 2.5≦Vcc<5.5V “L” Output Voltage2 VOL2 0 － 0.2 V IOL=1.0mA, 1.7≦Vcc<2.5V “H” Output Voltage1 VOH1 Vcc-0.2 － Vcc V IOH=-0.4mA, 2.5V≦Vcc<5.5V “H” Output Voltage2 VOH2 Vcc-0.2 － Vcc V IOH=-100µA, 1.7≦Vcc<2.5V Input Leakage Current ILI -1 － 1 μAVIN=0 to Vcc Output Leakage Current ILO -1 － 1 μAVOUT=0 to Vcc, CSB=Vcc 0.5 *1 ICC1 － － 1 *2 mA Vcc=1.8V, fSCK=5MHz, tE/W=5ms Byte Write, Page Write, Write Status register 1 *1 ICC2 － － 1.5 *2 mA Vcc=2.5V, fSCK=10MHz, tE/W=5ms Byte Write, Page Write, Write Status register 2 *1 Operating Current Write ICC3 － － 3 *2 mA Vcc=5.5V, fSCK=20MHz, tE/W=5ms Byte Write, Page Write, Write Status register ICC4 － － 1 mA Vcc=1.8V, fSCK=5MHz, SO=OPEN Read, Read Status Register ICC5 － － 1 mA Vcc=2.5V, fSCK=2MHz, SO=OPEN Read, Read Status Register ICC6 － － 1.5 mA Vcc=2.5V, fSCK=5MHz, SO=OPEN Read, Read Status Register ICC7 － － 2 mA Vcc=2.5V, fSCK=10MHz, SO=OPEN Read, Read Status Register ICC8 － － 2 mA Vcc=5.5V, fSCK=5MHz, SO=OPEN Read, Read Status Register ICC9 － － 4 mA Vcc=5.5V, fSCK=10MHz, SO=OPEN Read, Read Status Register Operating Current Read ICC10 － － 8 mA Vcc=5.5V, fSCK=20MHz, SO=OPEN Read, Read Status Register Standby Current ISB － － 2 μA Vcc=5.5V, SO=OPEN CSB=HOLDB=WP=Vcc, SCK=SI=Vcc or GND *1 BR25S320/640-W *2 BR25S128/256-W |
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