SI1032R-T1 datasheet(2/4 Pages) VISHAY

Part #	SI1032R-T1

Description	N-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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2 / 4 page

Si1032R/X

Vishay Siliconix

www.vishay.com

2

Document Number: 71172

S-40574—Rev. C, 29-Mar-04

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.40

0.7

1.2

V

Gate Body Leakage

IGSS

VDS = 0 V, VGS = "2.8 V

"0.5

"1.0

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "4.5 V

"1.0

"3.0

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V, TJ = 55_C

10

On-State Drain Currenta

ID(on)

VDS = 5 V, VGS = 4.5 V

250

mA

VGS = 4.5 V, ID = 200 mA

5

Drain Source On State Resistancea

r

VGS = 2.5 V, ID = 175 m A

7

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 1.8 V, ID = 150 m A

9

W

VDS = 1.5 V, ID = 40 mA

10

Forward Transconductancea

gfs

VDS = 10 V, ID = 200 mA

0.5

S

Diode Forward Voltagea

VSD

IS = 150 mA, VGS = 0 V

1.2

V

Dynamicb

Total Gate Charge

Qg

750

Gate-Source Charge

Qgs

VDS = 10 V, VGS = 4.5 V, ID = 150 mA

75

pC

Gate-Drain Charge

Qgd

225

Turn-On Delay Time

td(on)

50

Rise Time

tr

VDD = 10 V, RL = 47 W

25

ns

Turn-Off Delay Time

td(off)

VDD = 10 V, RL = 47 W

ID ^ 200 mA, VGEN = 4.5 V, RG = 10 W

50

ns

Fall Time

tf

25

Notes

a.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)

0

100

200

300

400

500

600

0.0

0.5

1.0

1.5

2.0

2.5

0.0

0.1

0.2

0.3

0.4

0.5

0123456

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS = 5 thru 1.8 V

VGS − Gate-to-Source Voltage (V)

TJ = −55_C

125_C

25_C

1 V

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