SI9435BDY-T1 datasheet(1/5 Pages) VISHAY

Part #	SI9435BDY-T1

Description	P-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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FEATURES

D TrenchFETr Power MOSFET

Si9435BDY

Vishay Siliconix

New Product

Document Number: 72245

S-32274—Rev. B, 03-Nov-03

www.vishay.com

1

P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

0.042 @ VGS = −10 V

−5.7

−30

0.055 @ VGS = −6 V

−5.0

0.070 @ VGS = −4.5 V

−4.4

SD

S

D

SD

G

D

SO-8

5

6

7

8

Top View

2

3

4

1

S

G

D

P-Channel MOSFET

Ordering Information: Si9435BDY

Si9435BDY-T1 (with Tape and Reel)

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

VDS

−30

V

Gate-Source Voltage

VGS

"20

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

−5.7

−4.1

Continuous Drain Current (TJ = 150_C)a

TA = 70_C

ID

−4.6

−3.2

A

Pulsed Drain Current

IDM

−30

A

continuous Source Current (Diode Conduction)a

IS

−2.3

−1.1

Maximum Power Dissipationa

TA = 25_C

PD

2.5

1.3

W

Maximum Power Dissipationa

TA = 70_C

PD

1.6

0.8

W

Operating Junction and Storage Temperature Range

TJ, Tstg

−55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t A bi ta

t v 10 sec

R

40

50

Maximum Junction-to-Ambienta

Steady State

RthJA

70

95

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

24

30

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

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SI9435BDY-T1 Datasheet(PDF) 1 Page - Vishay Siliconix

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