MJD127 datasheet(2/2 Pages) ISC

Part #	MJD127

Description	isc Silicon PNP Darlington Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

2

isc Silicon PNP Darlington Power Transistor

MJD127

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -30mA; IB= 0

-100

V

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC=-4A; IB= -16mA

-2.0

V

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC=-8A; IB= -80mA

-4.0

V

VBE(sat)

Base-Emitter Saturation Voltage

IC=-8A; IB= -80mA

-4.5

V

VBE(ON)

Base-Emitter voltage

IC= -4A; VCE= -4V

-2.8

V

ICEO

Collector Cutoff Current

VCE=-50V; IE= 0

-10

uA

IEBO

Emitter Cutoff Current

VEB=-5V; IC= 0

-2

mA

hFE1

DC Current Gain

IC= -4A; VCE=- 4V

1000

12000

hFE2

DC Current Gain

IC=-8A; VCE= -4V

100

fT

Current-Gain—Bandwidth Product

IC=-3A; VCE=- 4V

4

MHz

COB

Output Capacitance

IE=0;

VCB= -10V; f= 1.0MHz

300

pF

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