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E52035B62C Datasheet(PDF) 9 Page - ELMOS Semiconductor AG

Part # E52035B62C
Description  System basis chip (SBC) for LIN applications
Download  33 Pages
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Manufacturer  ELMOS [ELMOS Semiconductor AG]
Direct Link  http://www.elmos.de
Logo ELMOS - ELMOS Semiconductor AG

E52035B62C Datasheet(HTML) 9 Page - ELMOS Semiconductor AG

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LIN SBC with Voltage Regulator and Watchdog
E520.34 / .35
PRODUCTION DATA – May 20, 2015
Electrical Characteristics (continued)
(VS = +5V to +28V, Tamb = -40°C to +125°C, unless otherwise noted.
Typical values are at VS = +12.0V and Tamb = +25°C. Positive currents flow into the device pins.)
Description
Condition
Symbol
Min
Typ
Max
Unit
Voltage Regulator
output voltage range
E520.35 (5.0V device)
active mode
VS > 7V,
IVDD > -60mA
VDD,ACT5.0
4.9
5.0
5.1
V
output voltage range
E520.34 (3.3V device)
active mode
IVDD > -60mA
VDD,ACT3.3
3.23
3.3
3.37
V
output current range
VDD accuracy 2%
IDD,ACT
-60
-
-
mA
output current range
VDD accuracy 5%
IDD,ACT
-100
-
-
mA
output current limitation
IDD,LIM
-230
-
-130
mA
voltage drop between
pin VS and pin VDD
E520.35 (5.0V device)
3.8V < VS <
( VDD,ACTXX+ 300mV),
-60mA < IDD
VDD,LD60m
-
-
300
mV
voltage drop between
pin VS and pin VDD
E520.35 (5.0V device)
3.8V < VS <
( VDD,ACTXX+50mV ),
-5mA < IDD
VDD,LD5m
-
-
50
mV
power supply ripple rejection ratio 1) 10 Hz to 100 Hz
10 µF capacitor at
pin VDD,
VS = 14V,
IVDD = -15 mA
PSRR
50
-
-
dB
output voltage range 1)
E520.35 (5.0V device)
standby mode
VDD,STBY5.0
4.75
5.0
5.25
V
output voltage range 1)
E520.34 (3.3V device)
standby mode
VDD,STBY3.3
3.135
3.3
3.465
V
output current range
standby mode
IDD,STBY
-60
-
-
mA
LIN Transceiver
functional range LIN transceiver
VLIN,VS
7
-
18
V
recessive output voltage
TXD=high
VLIN,REC
VS -1V
-
VS
V
dominant output voltage
TXD=low, VS=7.0V,
RLIN
Ω
=0.5k to VS
VLIN,DOM
-
-
1.2
V
dominant output voltage
TXD=low, VS=18V,
RLIN
Ω
=0.5k to VS
VLIN,DOM1
-
-
2.0
V
receiver dominant level
VLIN,THDOM
-
-
0.4*VS
V
receiver recessive level
VLIN,THREC
0.6*VS
-
-
V
LIN bus center voltage
VLIN,BUSCNT=
(VLIN,THDOM+
VLIN,THREC)/2
VLIN,BUSCNT
0.475*VS
-
0.525*VS
V
receiver hysteresis
VLIN,THREC- VLIN,THDOM
VLIN,HYS
-
-
0.175*VS
V
1) not production tested
Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
Elmos Semiconductor AG
Data Sheet 9 / 33
QM-No.: 25DS0060E.05


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