Electronic Components Datasheet Search |
|
CJL3443 Datasheet(PDF) 1 Page - ZP Semiconductor |
|
CJL3443 Datasheet(HTML) 1 Page - ZP Semiconductor |
1 / 3 page SOT-23-6L Plastic-Encapsulate MOSFETS CJL3443 P-Channel 20-V(D-S) MOSFET FEATURE Fast Switching Speed Low Gate Charge High Performance Trench Technology for extremely Low RDS(on) Description This P-Channel MOSFET is produced using advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation In a very small footprint for applications where the larger packages are impractical. MARKING: Maximum ratings (Ta=25 ℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 Continuous Gate-Source Voltage VGS ±8 V Continuous Drain Current ID -4 A Power Dissipation PD 0.35 W Thermal Resistance from Junction to Ambient RθJA 357 ℃/W Operating Temperature Tj 150 Storage Temperature Tstg -55 ~+150 ℃ SOT-23-6L 1. GATE 2. DRAIN 3. SOURCE 3 5 6 4 1 2 3 R43 D D D D G S 1 of 3 sales@zpsemi.com www.zpsemi.com CJL3443 |
Similar Part No. - CJL3443 |
|
Similar Description - CJL3443 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |