CJL3443 datasheet(1/3 Pages) ZPSEMI

Part #	CJL3443

Description	P - Channel 20-V(D-S) MOSFET

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Manufacturer	ZPSEMI [ZP Semiconductor]

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SOT-23-6L Plastic-Encapsulate MOSFETS

CJL3443

P-Channel 20-V(D-S) MOSFET

FEATURE

Fast Switching Speed

Low Gate Charge

High Performance Trench Technology for extremely Low RDS(on)

Description

This P-Channel MOSFET is produced using advanced PowerTrench

process that has been especially tailored to minimize on-state resistance

and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation

In a very small footprint for applications where the larger packages are impractical.

MARKING:

Maximum ratings (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDS

-20

Continuous Gate-Source Voltage

VGS

±8

V

Continuous Drain Current

ID

-4

A

Power Dissipation

PD

0.35

W

Thermal Resistance from Junction to Ambient

RθJA

357

℃/W

Operating Temperature

Tj

150

Storage Temperature

Tstg

-55 ~+150

℃

SOT-23-6L

1. GATE

2. DRAIN

3. SOURCE

3

5

6

4

1

2

3

R43

D

G

S

1 of 3

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CJL3443

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