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2SD1816 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1816 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SD1816 DESCRIPTION · Excellent linearity of hFE · Small and slim package facilitating compactness of sets · Low collector-to-emitter saturation voltage · Fast switching speed · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Relay drivers,High speed inverters,converters and other general high-current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICP Collector Current-Pulse 8 A PC Collector Power Dissipation @ TC=25℃ 20 W Collector Power Dissipation @ Ta=25℃ 1.0 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Similar Part No. - 2SD1816 |
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Similar Description - 2SD1816 |
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